High voltage impulse generator using HV-IGBTs

M. Giesselmann, B. Palmer, A. Neuber, J. Donlon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous-duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.

Original languageEnglish
Title of host publication2005 IEEE Pulsed Power Conference, PPC
Pages763-766
Number of pages4
DOIs
StatePublished - 2007
Event2005 IEEE Pulsed Power Conference, PPC - Monterey, CA, United States
Duration: Jun 13 2005Jun 17 2005

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference2005 IEEE Pulsed Power Conference, PPC
CountryUnited States
CityMonterey, CA
Period06/13/0506/17/05

Fingerprint Dive into the research topics of 'High voltage impulse generator using HV-IGBTs'. Together they form a unique fingerprint.

Cite this