High voltage impulse generator using HV-IGBTs

M. Giesselmann; B. Palmer; A. Neuber; J. Donlon

doi:10.1109/PPC.2005.300773

High voltage impulse generator using HV-IGBTs

M. Giesselmann, B. Palmer, A. Neuber, J. Donlon

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous-duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.

Original language	English
Title of host publication	2005 IEEE Pulsed Power Conference, PPC
Pages	763-766
Number of pages	4
DOIs	https://doi.org/10.1109/PPC.2005.300773
State	Published - 2007
Event	2005 IEEE Pulsed Power Conference, PPC - Monterey, CA, United States Duration: Jun 13 2005 → Jun 17 2005

Publication series

Name	Digest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference	2005 IEEE Pulsed Power Conference, PPC
Country	United States
City	Monterey, CA
Period	06/13/05 → 06/17/05

Access to Document

10.1109/PPC.2005.300773

Link to publication in Scopus

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Cite this

@inproceedings{c0c38bf94bb946d896bd4f90b9b12080,

title = "High voltage impulse generator using HV-IGBTs",

abstract = "We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous-duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.",

author = "M. Giesselmann and B. Palmer and A. Neuber and J. Donlon",

year = "2007",

doi = "10.1109/PPC.2005.300773",

language = "English",

isbn = "078039190X",

series = "Digest of Technical Papers-IEEE International Pulsed Power Conference",

pages = "763--766",

booktitle = "2005 IEEE Pulsed Power Conference, PPC",

}

TY - GEN

T1 - High voltage impulse generator using HV-IGBTs

AU - Giesselmann, M.

AU - Palmer, B.

AU - Neuber, A.

AU - Donlon, J.

PY - 2007

Y1 - 2007

N2 - We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous-duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.

AB - We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous-duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.

UR - http://www.scopus.com/inward/record.url?scp=45149127360&partnerID=8YFLogxK

U2 - 10.1109/PPC.2005.300773

DO - 10.1109/PPC.2005.300773

M3 - Conference contribution

AN - SCOPUS:45149127360

SN - 078039190X

SN - 9780780391901

T3 - Digest of Technical Papers-IEEE International Pulsed Power Conference

SP - 763

EP - 766

BT - 2005 IEEE Pulsed Power Conference, PPC

Y2 - 13 June 2005 through 17 June 2005

ER -