TY - GEN
T1 - High voltage impulse generator using HV-IGBTs
AU - Giesselmann, M.
AU - Palmer, B.
AU - Neuber, A.
AU - Donlon, J.
PY - 2007
Y1 - 2007
N2 - We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous-duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.
AB - We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous-duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.
UR - http://www.scopus.com/inward/record.url?scp=45149127360&partnerID=8YFLogxK
U2 - 10.1109/PPC.2005.300773
DO - 10.1109/PPC.2005.300773
M3 - Conference contribution
AN - SCOPUS:45149127360
SN - 078039190X
SN - 9780780391901
T3 - Digest of Technical Papers-IEEE International Pulsed Power Conference
SP - 763
EP - 766
BT - 2005 IEEE Pulsed Power Conference, PPC
Y2 - 13 June 2005 through 17 June 2005
ER -