High-temperature uniaxial stress apparatus for semiconductor defect symmetry determination

S. Yang; D. Lamp

doi:10.1063/1.1144439

High-temperature uniaxial stress apparatus for semiconductor defect symmetry determination

S. Yang, D. Lamp

Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A mechanical apparatus designed for use in deep level transient spectroscopy (DLTS) experiments and capable of applying more than 5 GPa pressure to a semiconductor crystal sample at temperatures from 300-450 K is described. This compound lever system applies a temperature-independent stress to the sample throughout the temperature range of interest. As an illustration of this device's application, the initial result of a uniaxial stress DLTS experiment on EL2 in n-GaAs is given. EL2 is found to split under the [100] uniaxial stress, denying the As_Ga and As_Ga-As_i models.

Original language	English
Pages (from-to)	221-224
Number of pages	4
Journal	Review of Scientific Instruments
Volume	64
Issue number	1
DOIs	https://doi.org/10.1063/1.1144439
State	Published - 1993

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title = "High-temperature uniaxial stress apparatus for semiconductor defect symmetry determination",

abstract = "A mechanical apparatus designed for use in deep level transient spectroscopy (DLTS) experiments and capable of applying more than 5 GPa pressure to a semiconductor crystal sample at temperatures from 300-450 K is described. This compound lever system applies a temperature-independent stress to the sample throughout the temperature range of interest. As an illustration of this device's application, the initial result of a uniaxial stress DLTS experiment on EL2 in n-GaAs is given. EL2 is found to split under the [100] uniaxial stress, denying the AsGa and AsGa-Asi models.",

author = "S. Yang and D. Lamp",

year = "1993",

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AU - Lamp, D.

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AB - A mechanical apparatus designed for use in deep level transient spectroscopy (DLTS) experiments and capable of applying more than 5 GPa pressure to a semiconductor crystal sample at temperatures from 300-450 K is described. This compound lever system applies a temperature-independent stress to the sample throughout the temperature range of interest. As an illustration of this device's application, the initial result of a uniaxial stress DLTS experiment on EL2 in n-GaAs is given. EL2 is found to split under the [100] uniaxial stress, denying the AsGa and AsGa-Asi models.

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JO - Review of Scientific Instruments

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High-temperature uniaxial stress apparatus for semiconductor defect symmetry determination

Abstract

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