High-temperature uniaxial stress apparatus for semiconductor defect symmetry determination

S. Yang, D. Lamp

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A mechanical apparatus designed for use in deep level transient spectroscopy (DLTS) experiments and capable of applying more than 5 GPa pressure to a semiconductor crystal sample at temperatures from 300-450 K is described. This compound lever system applies a temperature-independent stress to the sample throughout the temperature range of interest. As an illustration of this device's application, the initial result of a uniaxial stress DLTS experiment on EL2 in n-GaAs is given. EL2 is found to split under the [100] uniaxial stress, denying the AsGa and AsGa-Asi models.

Original languageEnglish
Pages (from-to)221-224
Number of pages4
JournalReview of Scientific Instruments
Volume64
Issue number1
DOIs
StatePublished - 1993

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