TY - JOUR
T1 - High-temperature switching and evaluation of 4H-SiC gate turn-off thyristors and diodes under inductive loads
AU - Bayne, Stephen B.
AU - Wesley Tipton, C.
AU - Scozzie, C. J.
AU - Griffin, Timothy E.
PY - 2002
Y1 - 2002
N2 - Future U.S Army electric motor control applications will require power semiconductor devices that operate for thousands of hours at case temperatures of 150°C and higher. For reliable operation of silicon (Si)-based power electronics, the case temperature must be below 120°C. Because of this temperature limitation of Si, new wide bandgap materials, such as silicon carbide (SiC) are being investigated. We report on a SiC gate turn-off thyristor (GTO) and SiC p-i-n diode operating at case temperatures up to 150°C. For high power and high voltage applications the GTO is the switch of choice. In this study, currents up to 2 A where switched by the GTO under pulsed and continuous switching into an inductive load. The turn-on and turn-off gains, the on-state voltage, and the turn-on and turn-off times, as a function of temperature will be discussed.
AB - Future U.S Army electric motor control applications will require power semiconductor devices that operate for thousands of hours at case temperatures of 150°C and higher. For reliable operation of silicon (Si)-based power electronics, the case temperature must be below 120°C. Because of this temperature limitation of Si, new wide bandgap materials, such as silicon carbide (SiC) are being investigated. We report on a SiC gate turn-off thyristor (GTO) and SiC p-i-n diode operating at case temperatures up to 150°C. For high power and high voltage applications the GTO is the switch of choice. In this study, currents up to 2 A where switched by the GTO under pulsed and continuous switching into an inductive load. The turn-on and turn-off gains, the on-state voltage, and the turn-on and turn-off times, as a function of temperature will be discussed.
UR - http://www.scopus.com/inward/record.url?scp=23844445605&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:23844445605
SN - 0146-955X
SP - 305
EP - 310
JO - Proceedings of the Intersociety Energy Conversion Engineering Conference
JF - Proceedings of the Intersociety Energy Conversion Engineering Conference
T2 - 2002 37th Intersociety Energy Conversion Engineering Conference, IECEC
Y2 - 29 July 2002 through 31 July 2002
ER -