In this work we have investigated the temperature sensitivity of 1.3μm multi-quantum well lasers with InGaAsP well and barrier materials, with different separate confinement heterostructure layer thickness and internal biaxial strain values. Through a set of independent experiments such as spectrally resolved spontaneous emission, optical gain and differential carrier lifetime, and their respective temperature evolution, combined with a steady-state rate equation model, we identified the physical parameters limiting the high temperature performance of these devices. The observed increase of carrier overflow into the barrier and separate confinement heterostructure layers with injected current and temperatures resulted in strongly increased internal losses contributing to a faster degradation of the slope efficiency at elevated temperatures. Our results also suggest that the temperature dependence of differential gain and carrier density at transparency determines the temperature sensitivity of the threshold current in these devices.
|Number of pages||9|
|Journal||Brazilian Journal of Physics|
|State||Published - Dec 1997|