High temperature packaging and pulse testing of parallel sic thyristors

Bruce R. Geil, Stephen B. Bayne, Heather O'Brien

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


For fast rise time, high peak current pulse power applications, Silicon Carbide (SiC) is ideal due to its ability to tolerate high localized temperatures generated during switching. Several 4 mm × 4 mm SiC Gate Turn-Off thyristors (GTOs) manufactured by CREE were evaluated. Testing for individual and paired devices was performed under both single and repetitive pulsing using variable pulse duration, ring-down capacitor discharge circuit. At 150 °C, maximum single shot currents as high as 3.2 kA have been shown for single devices at a 50% pulse width of 2 μsec while parallel devices have shown a maximum of 4.4 kA at 150 °C.

Original languageEnglish
JournalSAE Technical Papers
StatePublished - 2006
EventPower Systems Conference - New Orleans, LA, United States
Duration: Nov 7 2006Nov 9 2006


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