High temperature growth of AlN by plasma-enhanced molecular beam epitaxy

Engineering & Materials Science

• Growth temperature 100%
• Molecular beam epitaxy 96%
• Plasmas 57%
• Nitridation 38%
• Buffer layers 35%
• Substrates 35%
• Sapphire 33%
• Surface morphology 27%
• Temperature 24%
• Crystals 24%
• X ray diffraction 24%
• Nitrogen 22%
• Surface roughness 20%
• Lattice constants 18%
• Kinetic energy 13%
• Grain boundaries 12%
• Thin films 11%
• Ions 11%
• X rays 11%
• Microwaves 10%
• Fluxes 10%
• Degradation 8%

Physics & Astronomy

• molecular beam epitaxy 52%
• sapphire 21%
• buffers 20%
• nitrogen 18%
• x rays 16%
• temperature ratio 15%
• curves 13%
• crystals 12%
• temperature 11%
• surface roughness 10%
• roughness 10%
• kinetic energy 9%
• degradation 9%
• grain boundaries 9%
• microwaves 8%
• symmetry 7%
• thin films 6%
• ions 5%

Chemistry

• Molecular Beam Epitaxy 88%
• Surface 19%
• Liquid Film 17%
• Buffer Solution 16%
• Kinetic Energy 14%
• Lattice Constant 13%
• Grain Boundary 12%
• Surface Roughness 12%
• Microwave 10%
• Reflection 9%
• Strain 8%
• X-Ray 7%
• Ion 4%