High quality GaN-InGaN heterostructures grown on (111) silicon substrates

J. W. Yang; C. J. Sun; Q. Chen; M. Z. Anwar; M. Asif Khan; S. A. Nikishin; G. A. Seryogin; A. V. Osinsky; L. Chernyak; H. Temkin; Chimin Hu; S. Mahajan

doi:10.1063/1.117247

High quality GaN-InGaN heterostructures grown on (111) silicon substrates

J. W. Yang, C. J. Sun, Q. Chen, M. Z. Anwar, M. Asif Khan, S. A. Nikishin, G. A. Seryogin, A. V. Osinsky, L. Chernyak, H. Temkin, Chimin Hu, S. Mahajan

Electrical and Computer Engineering

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Abstract

We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate.

Original language	English
Pages (from-to)	3566-3568
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	23
DOIs	https://doi.org/10.1063/1.117247
State	Published - Dec 2 1996

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title = "High quality GaN-InGaN heterostructures grown on (111) silicon substrates",

abstract = "We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate.",

author = "Yang, {J. W.} and Sun, {C. J.} and Q. Chen and Anwar, {M. Z.} and {Asif Khan}, M. and Nikishin, {S. A.} and Seryogin, {G. A.} and Osinsky, {A. V.} and L. Chernyak and H. Temkin and Chimin Hu and S. Mahajan",

year = "1996",

month = dec,

day = "2",

doi = "10.1063/1.117247",

language = "English",

volume = "69",

pages = "3566--3568",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - High quality GaN-InGaN heterostructures grown on (111) silicon substrates

AU - Yang, J. W.

AU - Sun, C. J.

AU - Chen, Q.

AU - Anwar, M. Z.

AU - Asif Khan, M.

AU - Nikishin, S. A.

AU - Seryogin, G. A.

AU - Osinsky, A. V.

AU - Chernyak, L.

AU - Temkin, H.

AU - Hu, Chimin

AU - Mahajan, S.

PY - 1996/12/2

Y1 - 1996/12/2

N2 - We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate.

AB - We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate.

UR - http://www.scopus.com/inward/record.url?scp=0000573530&partnerID=8YFLogxK

U2 - 10.1063/1.117247

DO - 10.1063/1.117247

M3 - Article

AN - SCOPUS:0000573530

SN - 0003-6951

VL - 69

SP - 3566

EP - 3568

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

High quality GaN-InGaN heterostructures grown on (111) silicon substrates

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