High quality GaN-InGaN heterostructures grown on (111) silicon substrates

J. W. Yang, C. J. Sun, Q. Chen, M. Z. Anwar, M. Asif Khan, S. A. Nikishin, G. A. Seryogin, A. V. Osinsky, L. Chernyak, H. Temkin, Chimin Hu, S. Mahajan

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Abstract

We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate.

Original languageEnglish
Pages (from-to)3566-3568
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number23
DOIs
StatePublished - Dec 2 1996

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Yang, J. W., Sun, C. J., Chen, Q., Anwar, M. Z., Asif Khan, M., Nikishin, S. A., Seryogin, G. A., Osinsky, A. V., Chernyak, L., Temkin, H., Hu, C., & Mahajan, S. (1996). High quality GaN-InGaN heterostructures grown on (111) silicon substrates. Applied Physics Letters, 69(23), 3566-3568. https://doi.org/10.1063/1.117247