High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, V. G. Antipov, S. Francoeur, L. Grave De Peralta, G. A. Seryogin, H. Temkin, T. I. Prokofyeva, M. Holtz, S. N.G. Chu

Research output: Contribution to journal › Article › peer-review

214 Scopus citations

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Physics & Astronomy