High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, V. G. Antipov, S. Francoeur, L. Grave De Peralta, G. A. Seryogin, H. Temkin, T. I. Prokofyeva, M. Holtz, S. N.G. Chu

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Abstract

The growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia is described. The initial deposition of Al, at 1130-1190 K, resulted in a very rapid transition to a 2D growth mode of AlN. It is shown that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.

Original languageEnglish
Pages (from-to)2073-2075
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number14
DOIs
StatePublished - Oct 4 1999

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