High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin; N. N. Faleev; V. G. Antipov; S. Francoeur; L. Grave De Peralta; G. A. Seryogin; H. Temkin; T. I. Prokofyeva; M. Holtz; S. N.G. Chu

doi:10.1063/1.124920

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, V. G. Antipov, S. Francoeur, L. Grave De Peralta, G. A. Seryogin, H. Temkin, T. I. Prokofyeva, M. Holtz, S. N.G. Chu

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Abstract

The growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia is described. The initial deposition of Al, at 1130-1190 K, resulted in a very rapid transition to a 2D growth mode of AlN. It is shown that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.

Original language	English
Pages (from-to)	2073-2075
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	14
DOIs	https://doi.org/10.1063/1.124920
State	Published - Oct 4 1999

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title = "High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia",

abstract = "The growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia is described. The initial deposition of Al, at 1130-1190 K, resulted in a very rapid transition to a 2D growth mode of AlN. It is shown that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.",

author = "Nikishin, {S. A.} and Faleev, {N. N.} and Antipov, {V. G.} and S. Francoeur and {Grave De Peralta}, L. and Seryogin, {G. A.} and H. Temkin and Prokofyeva, {T. I.} and M. Holtz and Chu, {S. N.G.}",

year = "1999",

month = oct,

day = "4",

doi = "10.1063/1.124920",

language = "English",

volume = "75",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

AU - Nikishin, S. A.

AU - Faleev, N. N.

AU - Antipov, V. G.

AU - Francoeur, S.

AU - Grave De Peralta, L.

AU - Seryogin, G. A.

AU - Temkin, H.

AU - Prokofyeva, T. I.

AU - Holtz, M.

AU - Chu, S. N.G.

PY - 1999/10/4

Y1 - 1999/10/4

N2 - The growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia is described. The initial deposition of Al, at 1130-1190 K, resulted in a very rapid transition to a 2D growth mode of AlN. It is shown that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.

AB - The growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia is described. The initial deposition of Al, at 1130-1190 K, resulted in a very rapid transition to a 2D growth mode of AlN. It is shown that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire.

UR - http://www.scopus.com/inward/record.url?scp=0032606366&partnerID=8YFLogxK

U2 - 10.1063/1.124920

DO - 10.1063/1.124920

M3 - Article

AN - SCOPUS:0032606366

VL - 75

SP - 2073

EP - 2075

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

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