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High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia
S. A. Nikishin, V. G. Antipov, S. Francoeur, N. N. Faleev, G. A. Seryogin, V. A. Elyukhin, H. Temkin, T. I. Prokofyeva, M. Holtz, A. Konkar, S. Zollner
Research output: Contribution to journal › Article › peer-review
69
Scopus
citations