High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

S. A. Nikishin, V. G. Antipov, S. Francoeur, N. N. Faleev, G. A. Seryogin, V. A. Elyukhin, H. Temkin, T. I. Prokofyeva, M. Holtz, A. Konkar, S. Zollner

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Abstract

AlN films were grown on Si wafers by gas-source molecular beam epitaxy using ammonia. The evolution of the reflection high-energy electron diffraction patterns, along the Si[110] azimuth, was examined for the different growth stages. Atomic force microscopy was performed on the film grown under optimized conditions on a slightly miscut Si(111) wafer, while X-ray reflectivity was measured on two AlN/Si samples with and without initial nitridation of the Si surface.

Original languageEnglish
Pages (from-to)484-486
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number4
DOIs
StatePublished - Jul 26 1999

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