High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

S. A. Nikishin; V. G. Antipov; S. Francoeur; N. N. Faleev; G. A. Seryogin; V. A. Elyukhin; H. Temkin; T. I. Prokofyeva; M. Holtz; A. Konkar; S. Zollner

doi:10.1063/1.124423

High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

S. A. Nikishin, V. G. Antipov, S. Francoeur, N. N. Faleev, G. A. Seryogin, V. A. Elyukhin, H. Temkin, T. I. Prokofyeva, M. Holtz, A. Konkar, S. Zollner

Electrical and Computer Engineering

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Abstract

AlN films were grown on Si wafers by gas-source molecular beam epitaxy using ammonia. The evolution of the reflection high-energy electron diffraction patterns, along the Si[110] azimuth, was examined for the different growth stages. Atomic force microscopy was performed on the film grown under optimized conditions on a slightly miscut Si(111) wafer, while X-ray reflectivity was measured on two AlN/Si samples with and without initial nitridation of the Si surface.

Original language	English
Pages (from-to)	484-486
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	4
DOIs	https://doi.org/10.1063/1.124423
State	Published - Jul 26 1999

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title = "High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia",

abstract = "AlN films were grown on Si wafers by gas-source molecular beam epitaxy using ammonia. The evolution of the reflection high-energy electron diffraction patterns, along the Si[110] azimuth, was examined for the different growth stages. Atomic force microscopy was performed on the film grown under optimized conditions on a slightly miscut Si(111) wafer, while X-ray reflectivity was measured on two AlN/Si samples with and without initial nitridation of the Si surface.",

author = "Nikishin, {S. A.} and Antipov, {V. G.} and S. Francoeur and Faleev, {N. N.} and Seryogin, {G. A.} and Elyukhin, {V. A.} and H. Temkin and Prokofyeva, {T. I.} and M. Holtz and A. Konkar and S. Zollner",

year = "1999",

month = jul,

day = "26",

doi = "10.1063/1.124423",

language = "English",

volume = "75",

pages = "484--486",

journal = "Applied Physics Letters",

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T1 - High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

AU - Nikishin, S. A.

AU - Antipov, V. G.

AU - Francoeur, S.

AU - Faleev, N. N.

AU - Seryogin, G. A.

AU - Elyukhin, V. A.

AU - Temkin, H.

AU - Prokofyeva, T. I.

AU - Holtz, M.

AU - Konkar, A.

AU - Zollner, S.

PY - 1999/7/26

Y1 - 1999/7/26

N2 - AlN films were grown on Si wafers by gas-source molecular beam epitaxy using ammonia. The evolution of the reflection high-energy electron diffraction patterns, along the Si[110] azimuth, was examined for the different growth stages. Atomic force microscopy was performed on the film grown under optimized conditions on a slightly miscut Si(111) wafer, while X-ray reflectivity was measured on two AlN/Si samples with and without initial nitridation of the Si surface.

AB - AlN films were grown on Si wafers by gas-source molecular beam epitaxy using ammonia. The evolution of the reflection high-energy electron diffraction patterns, along the Si[110] azimuth, was examined for the different growth stages. Atomic force microscopy was performed on the film grown under optimized conditions on a slightly miscut Si(111) wafer, while X-ray reflectivity was measured on two AlN/Si samples with and without initial nitridation of the Si surface.

UR - http://www.scopus.com/inward/record.url?scp=0032614509&partnerID=8YFLogxK

U2 - 10.1063/1.124423

DO - 10.1063/1.124423

M3 - Article

AN - SCOPUS:0032614509

SN - 0003-6951

VL - 75

SP - 484

EP - 486

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

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