Abstract
AlN films were grown on Si wafers by gas-source molecular beam epitaxy using ammonia. The evolution of the reflection high-energy electron diffraction patterns, along the Si[110] azimuth, was examined for the different growth stages. Atomic force microscopy was performed on the film grown under optimized conditions on a slightly miscut Si(111) wafer, while X-ray reflectivity was measured on two AlN/Si samples with and without initial nitridation of the Si surface.
Original language | English |
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Pages (from-to) | 484-486 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 4 |
DOIs | |
State | Published - Jul 26 1999 |