High quality AlN for deep UV photodetectors

S. Nikishin; B. Borisov; M. Pandikunta; R. Dahal; J. Y. Lin; H. X. Jiang; H. Harris; M. Holtz

doi:10.1063/1.3200229

High quality AlN for deep UV photodetectors

S. Nikishin, B. Borisov, M. Pandikunta, R. Dahal, J. Y. Lin, H. X. Jiang, H. Harris, M. Holtz

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

We have prepared large-area, 0.50×0.55 mm², metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN/GaN short period superlattices after growth of AlN nucleation layer yields significant reduction in the ID density. Photodetectors with ID density of 106 cm^-2 exhibit a very low dark current of 0.5 fA at zero bias, which remains below 50 fA up to a bias of ±30 V. The peak responsivity of 0.08 A/W was obtained at a wavelength of ∼202 nm.

Original language	English
Article number	054101
Journal	Applied Physics Letters
Volume	95
Issue number	5
DOIs	https://doi.org/10.1063/1.3200229
State	Published - 2009

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title = "High quality AlN for deep UV photodetectors",

abstract = "We have prepared large-area, 0.50×0.55 mm2, metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN/GaN short period superlattices after growth of AlN nucleation layer yields significant reduction in the ID density. Photodetectors with ID density of 106 cm-2 exhibit a very low dark current of 0.5 fA at zero bias, which remains below 50 fA up to a bias of ±30 V. The peak responsivity of 0.08 A/W was obtained at a wavelength of ∼202 nm.",

author = "S. Nikishin and B. Borisov and M. Pandikunta and R. Dahal and Lin, {J. Y.} and Jiang, {H. X.} and H. Harris and M. Holtz",

note = "Funding Information: This work was supported in part by the National Science Foundation (Grant No. ECS-0609416), U.S. Army CERDEC contract (No. W15P7T-07-D-P040), the J. F. Maddox Foundation, and DOE (Grant No. DE-FG02-09ER46552). J.Y.L. and H.X.J. gratefully acknowledge the support of the Linda and Edward Whitacre endowment through the AT&T Foundation.",

year = "2009",

doi = "10.1063/1.3200229",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "5",

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TY - JOUR

T1 - High quality AlN for deep UV photodetectors

AU - Nikishin, S.

AU - Borisov, B.

AU - Pandikunta, M.

AU - Dahal, R.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Harris, H.

AU - Holtz, M.

N1 - Funding Information: This work was supported in part by the National Science Foundation (Grant No. ECS-0609416), U.S. Army CERDEC contract (No. W15P7T-07-D-P040), the J. F. Maddox Foundation, and DOE (Grant No. DE-FG02-09ER46552). J.Y.L. and H.X.J. gratefully acknowledge the support of the Linda and Edward Whitacre endowment through the AT&T Foundation.

PY - 2009

Y1 - 2009

N2 - We have prepared large-area, 0.50×0.55 mm2, metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN/GaN short period superlattices after growth of AlN nucleation layer yields significant reduction in the ID density. Photodetectors with ID density of 106 cm-2 exhibit a very low dark current of 0.5 fA at zero bias, which remains below 50 fA up to a bias of ±30 V. The peak responsivity of 0.08 A/W was obtained at a wavelength of ∼202 nm.

AB - We have prepared large-area, 0.50×0.55 mm2, metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN/GaN short period superlattices after growth of AlN nucleation layer yields significant reduction in the ID density. Photodetectors with ID density of 106 cm-2 exhibit a very low dark current of 0.5 fA at zero bias, which remains below 50 fA up to a bias of ±30 V. The peak responsivity of 0.08 A/W was obtained at a wavelength of ∼202 nm.

UR - http://www.scopus.com/inward/record.url?scp=68349130262&partnerID=8YFLogxK

U2 - 10.1063/1.3200229

DO - 10.1063/1.3200229

M3 - Article

AN - SCOPUS:68349130262

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 054101

ER -

High quality AlN for deep UV photodetectors

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