High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin; Nikolai N. Faleev; Vladimir G. Antipov; Sebastien Francoeur; Luis Grave de Peralta; George A. Seryogin; Mark Holtz; Tat'yana I. Prokofyeva; S. N.G. Chu; Andrei S. Zubrilov; Vyacheslav A. Elyukhin; Irina P. Nikitina; Andrei Nikolaev; Yuriy Melnik; Vladimir Dmitriev; al et al

High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin, Nikolai N. Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, Tat'yana I. Prokofyeva, S. N.G. Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, al et al

Research output: Contribution to journal › Conference article › peer-review

Abstract

We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH₃). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

Original language	English
Pages (from-to)	W8.3.1 - W8.3.6
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 28 1999 → Dec 3 1999

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Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., Grave de Peralta, L., Seryogin, G. A., Holtz, M., Prokofyeva, T. I., Chu, S. N. G., Zubrilov, A. S., Elyukhin, V. A., Nikitina, I. P., Nikolaev, A., Melnik, Y., Dmitriev, V., & et al, A. (2000). High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. Materials Research Society Symposium - Proceedings, 595, W8.3.1 - W8.3.6.

Nikishin, Sergey A. ; Faleev, Nikolai N. ; Antipov, Vladimir G. ; Francoeur, Sebastien ; Grave de Peralta, Luis ; Seryogin, George A. ; Holtz, Mark ; Prokofyeva, Tat'yana I. ; Chu, S. N.G. ; Zubrilov, Andrei S. ; Elyukhin, Vyacheslav A. ; Nikitina, Irina P. ; Nikolaev, Andrei ; Melnik, Yuriy ; Dmitriev, Vladimir ; et al, al. / High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. In: Materials Research Society Symposium - Proceedings. 2000 ; Vol. 595. pp. W8.3.1 - W8.3.6.

@article{0c4479af1f034136bb89d57a4db8eb00,

title = "High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia",

abstract = "We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).",

author = "Nikishin, {Sergey A.} and Faleev, {Nikolai N.} and Antipov, {Vladimir G.} and Sebastien Francoeur and {Grave de Peralta}, Luis and Seryogin, {George A.} and Mark Holtz and Prokofyeva, {Tat'yana I.} and Chu, {S. N.G.} and Zubrilov, {Andrei S.} and Elyukhin, {Vyacheslav A.} and Nikitina, {Irina P.} and Andrei Nikolaev and Yuriy Melnik and Vladimir Dmitriev and {et al}, al",

year = "2000",

language = "English",

volume = "595",

pages = "W8.3.1 -- W8.3.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

}

Nikishin, SA, Faleev, NN, Antipov, VG, Francoeur, S, Grave de Peralta, L, Seryogin, GA, Holtz, M, Prokofyeva, TI, Chu, SNG, Zubrilov, AS, Elyukhin, VA, Nikitina, IP, Nikolaev, A, Melnik, Y, Dmitriev, V & et al, A 2000, 'High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia', Materials Research Society Symposium - Proceedings, vol. 595, pp. W8.3.1 - W8.3.6.

High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. / Nikishin, Sergey A.; Faleev, Nikolai N.; Antipov, Vladimir G.; Francoeur, Sebastien; Grave de Peralta, Luis; Seryogin, George A.; Holtz, Mark; Prokofyeva, Tat'yana I.; Chu, S. N.G.; Zubrilov, Andrei S.; Elyukhin, Vyacheslav A.; Nikitina, Irina P.; Nikolaev, Andrei; Melnik, Yuriy; Dmitriev, Vladimir; et al, al.

In: Materials Research Society Symposium - Proceedings, Vol. 595, 2000, p. W8.3.1 - W8.3.6.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

AU - Nikishin, Sergey A.

AU - Faleev, Nikolai N.

AU - Antipov, Vladimir G.

AU - Francoeur, Sebastien

AU - Grave de Peralta, Luis

AU - Seryogin, George A.

AU - Holtz, Mark

AU - Prokofyeva, Tat'yana I.

AU - Chu, S. N.G.

AU - Zubrilov, Andrei S.

AU - Elyukhin, Vyacheslav A.

AU - Nikitina, Irina P.

AU - Nikolaev, Andrei

AU - Melnik, Yuriy

AU - Dmitriev, Vladimir

AU - et al, al

PY - 2000

Y1 - 2000

N2 - We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

AB - We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

UR - http://www.scopus.com/inward/record.url?scp=17744417119&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17744417119

VL - 595

SP - W8.3.1 - W8.3.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

Y2 - 28 November 1999 through 3 December 1999

ER -