TY - JOUR
T1 - High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
AU - Nikishin, Sergey A.
AU - Faleev, Nikolai N.
AU - Antipov, Vladimir G.
AU - Francoeur, Sebastien
AU - Grave de Peralta, Luis
AU - Seryogin, George A.
AU - Holtz, Mark
AU - Prokofyeva, Tat'yana I.
AU - Chu, S. N.G.
AU - Zubrilov, Andrei S.
AU - Elyukhin, Vyacheslav A.
AU - Nikitina, Irina P.
AU - Nikolaev, Andrei
AU - Melnik, Yuriy
AU - Dmitriev, Vladimir
AU - et al, al
N1 - Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000
Y1 - 2000
N2 - We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).
AB - We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).
UR - http://www.scopus.com/inward/record.url?scp=17744417119&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:17744417119
VL - 595
SP - W8.3.1 - W8.3.6
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
Y2 - 28 November 1999 through 3 December 1999
ER -