High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin, Nikolai N. Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave De Peralta, George A. Seryogin, Mark Holtz, Tat'yana I. Prokofyeva, S. N.G. Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, Henryk Temkin

Research output: Contribution to journalArticle

Abstract

We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlM. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
DOIs
StatePublished - 2000

Fingerprint Dive into the research topics of 'High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia'. Together they form a unique fingerprint.

  • Cite this

    Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., De Peralta, L. G., Seryogin, G. A., Holtz, M., Prokofyeva, T. I., Chu, S. N. G., Zubrilov, A. S., Elyukhin, V. A., Nikitina, I. P., Nikolaev, A., Melnik, Y., Dmitriev, V., & Temkin, H. (2000). High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. MRS Internet Journal of Nitride Semiconductor Research, 5(SUPPL. 1). https://doi.org/10.1557/s1092578300004658