High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin; Nikolai N. Faleev; Vladimir G. Antipov; Sebastien Francoeur; Luis Grave De Peralta; George A. Seryogin; Mark Holtz; Tat'yana I. Prokofyeva; S. N.G. Chu; Andrei S. Zubrilov; Vyacheslav A. Elyukhin; Irina P. Nikitina; Andrei Nikolaev; Yuriy Melnik; Vladimir Dmitriev; Henryk Temkin

doi:10.1557/s1092578300004658

High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin, Nikolai N. Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave De Peralta, George A. Seryogin, Mark Holtz, Tat'yana I. Prokofyeva, S. N.G. Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, Henryk Temkin

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Abstract

We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH₃). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlM. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

Original language	English
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	5
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300004658
State	Published - 2000

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Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., De Peralta, L. G., Seryogin, G. A., Holtz, M., Prokofyeva, T. I., Chu, S. N. G., Zubrilov, A. S., Elyukhin, V. A., Nikitina, I. P., Nikolaev, A., Melnik, Y., Dmitriev, V., & Temkin, H. (2000). High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. MRS Internet Journal of Nitride Semiconductor Research, 5(SUPPL. 1). https://doi.org/10.1557/s1092578300004658

@article{1b5e10caf6a04b25bf83d70dad8a5211,

title = "High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia",

abstract = "We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlM. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).",

author = "Nikishin, {Sergey A.} and Faleev, {Nikolai N.} and Antipov, {Vladimir G.} and Sebastien Francoeur and {De Peralta}, {Luis Grave} and Seryogin, {George A.} and Mark Holtz and Prokofyeva, {Tat'yana I.} and Chu, {S. N.G.} and Zubrilov, {Andrei S.} and Elyukhin, {Vyacheslav A.} and Nikitina, {Irina P.} and Andrei Nikolaev and Yuriy Melnik and Vladimir Dmitriev and Henryk Temkin",

year = "2000",

doi = "10.1557/s1092578300004658",

language = "English",

volume = "5",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

number = "SUPPL. 1",

}

Nikishin, SA, Faleev, NN, Antipov, VG, Francoeur, S, De Peralta, LG, Seryogin, GA, Holtz, M, Prokofyeva, TI, Chu, SNG, Zubrilov, AS, Elyukhin, VA, Nikitina, IP, Nikolaev, A, Melnik, Y, Dmitriev, V & Temkin, H 2000, 'High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia', MRS Internet Journal of Nitride Semiconductor Research, vol. 5, no. SUPPL. 1. https://doi.org/10.1557/s1092578300004658

TY - JOUR

T1 - High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

AU - Nikishin, Sergey A.

AU - Faleev, Nikolai N.

AU - Antipov, Vladimir G.

AU - Francoeur, Sebastien

AU - De Peralta, Luis Grave

AU - Seryogin, George A.

AU - Holtz, Mark

AU - Prokofyeva, Tat'yana I.

AU - Chu, S. N.G.

AU - Zubrilov, Andrei S.

AU - Elyukhin, Vyacheslav A.

AU - Nikitina, Irina P.

AU - Nikolaev, Andrei

AU - Melnik, Yuriy

AU - Dmitriev, Vladimir

AU - Temkin, Henryk

PY - 2000

Y1 - 2000

N2 - We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlM. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

AB - We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlM. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick (> 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

UR - http://www.scopus.com/inward/record.url?scp=3242762226&partnerID=8YFLogxK

U2 - 10.1557/s1092578300004658

DO - 10.1557/s1092578300004658

M3 - Article

AN - SCOPUS:3242762226

SN - 1092-5783

VL - 5

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

ER -

High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

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