A review is given of the synthesis and characterization of high Alcontent AlGaN thin films, including optical properties, bandgap bowing, exciton localization, and n- and p-type doping. A summary of energy levels for various acceptors in AlN is also given.
|Title of host publication||GaN and ZnO-based Materials and Devices|
|Number of pages||53|
|State||Published - 2012|
|Name||Springer Series in Materials Science|