High Quality AIN and GaN Grown on Si(111) by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin, Nikolai N. Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave De Peralta, George A. Seryogin, Mark Holtz, Ta T.Yana I. Prokofyeva, S. N.G. Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, Henryk Temkin

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