TY - GEN
T1 - High-purity semi-insulating 4H-SiC as a high-voltage switch material
AU - James, C.
AU - Hettler, C.
AU - Dickens, J.
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating (HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on 6H-SiC due to higher carrier mobility and longer carrier lifetimes. Using a novel micropipe identification method, vertical PCSS devices have been fabricated from c-plane wafers that lead to higher hold-off voltage and decreased on-state resistance as compared to a lateral geometry. Operation of the photo switch in both on- and off-state is demonstrated and material characterization via microwave photoconductance decay (MPCD) is given.
AB - A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating (HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on 6H-SiC due to higher carrier mobility and longer carrier lifetimes. Using a novel micropipe identification method, vertical PCSS devices have been fabricated from c-plane wafers that lead to higher hold-off voltage and decreased on-state resistance as compared to a lateral geometry. Operation of the photo switch in both on- and off-state is demonstrated and material characterization via microwave photoconductance decay (MPCD) is given.
UR - http://www.scopus.com/inward/record.url?scp=80051774440&partnerID=8YFLogxK
U2 - 10.1109/IPMHVC.2010.5958348
DO - 10.1109/IPMHVC.2010.5958348
M3 - Conference contribution
AN - SCOPUS:80051774440
SN - 9781424471294
T3 - Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
SP - 282
EP - 284
BT - Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Y2 - 23 May 2010 through 27 May 2010
ER -