High-purity semi-insulating 4H-SiC as a high-voltage switch material

C. James; C. Hettler; J. Dickens

doi:10.1109/IPMHVC.2010.5958348

High-purity semi-insulating 4H-SiC as a high-voltage switch material

C. James, C. Hettler, J. Dickens

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating (HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on 6H-SiC due to higher carrier mobility and longer carrier lifetimes. Using a novel micropipe identification method, vertical PCSS devices have been fabricated from c-plane wafers that lead to higher hold-off voltage and decreased on-state resistance as compared to a lateral geometry. Operation of the photo switch in both on- and off-state is demonstrated and material characterization via microwave photoconductance decay (MPCD) is given.

Original language	English
Title of host publication	Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Pages	282-284
Number of pages	3
DOIs	https://doi.org/10.1109/IPMHVC.2010.5958348
State	Published - 2010
Event	2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 - Atlanta, GA, United States Duration: May 23 2010 → May 27 2010

Publication series

Name	Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

Conference

Conference	2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Country/Territory	United States
City	Atlanta, GA
Period	05/23/10 → 05/27/10

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10.1109/IPMHVC.2010.5958348

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James, C., Hettler, C., & Dickens, J. (2010). High-purity semi-insulating 4H-SiC as a high-voltage switch material. In Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 (pp. 282-284). [5958348] (Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010). https://doi.org/10.1109/IPMHVC.2010.5958348

@inproceedings{27f6518c7be64d3ea777c7e112f7f140,

title = "High-purity semi-insulating 4H-SiC as a high-voltage switch material",

abstract = "A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating (HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on 6H-SiC due to higher carrier mobility and longer carrier lifetimes. Using a novel micropipe identification method, vertical PCSS devices have been fabricated from c-plane wafers that lead to higher hold-off voltage and decreased on-state resistance as compared to a lateral geometry. Operation of the photo switch in both on- and off-state is demonstrated and material characterization via microwave photoconductance decay (MPCD) is given.",

author = "C. James and C. Hettler and J. Dickens",

year = "2010",

doi = "10.1109/IPMHVC.2010.5958348",

language = "English",

isbn = "9781424471294",

series = "Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010",

pages = "282--284",

booktitle = "Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010",

note = "null ; Conference date: 23-05-2010 Through 27-05-2010",

}

James, C, Hettler, C & Dickens, J 2010, High-purity semi-insulating 4H-SiC as a high-voltage switch material. in Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010., 5958348, Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010, pp. 282-284, 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010, Atlanta, GA, United States, 05/23/10. https://doi.org/10.1109/IPMHVC.2010.5958348

High-purity semi-insulating 4H-SiC as a high-voltage switch material. / James, C.; Hettler, C.; Dickens, J.

Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010. 2010. p. 282-284 5958348 (Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-purity semi-insulating 4H-SiC as a high-voltage switch material

AU - James, C.

AU - Hettler, C.

AU - Dickens, J.

PY - 2010

Y1 - 2010

N2 - A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating (HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on 6H-SiC due to higher carrier mobility and longer carrier lifetimes. Using a novel micropipe identification method, vertical PCSS devices have been fabricated from c-plane wafers that lead to higher hold-off voltage and decreased on-state resistance as compared to a lateral geometry. Operation of the photo switch in both on- and off-state is demonstrated and material characterization via microwave photoconductance decay (MPCD) is given.

AB - A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating (HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on 6H-SiC due to higher carrier mobility and longer carrier lifetimes. Using a novel micropipe identification method, vertical PCSS devices have been fabricated from c-plane wafers that lead to higher hold-off voltage and decreased on-state resistance as compared to a lateral geometry. Operation of the photo switch in both on- and off-state is demonstrated and material characterization via microwave photoconductance decay (MPCD) is given.

UR - http://www.scopus.com/inward/record.url?scp=80051774440&partnerID=8YFLogxK

U2 - 10.1109/IPMHVC.2010.5958348

DO - 10.1109/IPMHVC.2010.5958348

M3 - Conference contribution

AN - SCOPUS:80051774440

SN - 9781424471294

T3 - Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

SP - 282

EP - 284

BT - Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

Y2 - 23 May 2010 through 27 May 2010

ER -

James C, Hettler C, Dickens J. High-purity semi-insulating 4H-SiC as a high-voltage switch material. In Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010. 2010. p. 282-284. 5958348. (Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010). https://doi.org/10.1109/IPMHVC.2010.5958348

High-purity semi-insulating 4H-SiC as a high-voltage switch material

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