@inproceedings{27f6518c7be64d3ea777c7e112f7f140,
title = "High-purity semi-insulating 4H-SiC as a high-voltage switch material",
abstract = "A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating (HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on 6H-SiC due to higher carrier mobility and longer carrier lifetimes. Using a novel micropipe identification method, vertical PCSS devices have been fabricated from c-plane wafers that lead to higher hold-off voltage and decreased on-state resistance as compared to a lateral geometry. Operation of the photo switch in both on- and off-state is demonstrated and material characterization via microwave photoconductance decay (MPCD) is given.",
author = "C. James and C. Hettler and J. Dickens",
year = "2010",
doi = "10.1109/IPMHVC.2010.5958348",
language = "English",
isbn = "9781424471294",
series = "Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010",
pages = "282--284",
booktitle = "Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010",
note = "null ; Conference date: 23-05-2010 Through 27-05-2010",
}