High-purity semi-insulating 4H-SiC as a high-voltage switch material

C. James, C. Hettler, J. Dickens

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating (HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on 6H-SiC due to higher carrier mobility and longer carrier lifetimes. Using a novel micropipe identification method, vertical PCSS devices have been fabricated from c-plane wafers that lead to higher hold-off voltage and decreased on-state resistance as compared to a lateral geometry. Operation of the photo switch in both on- and off-state is demonstrated and material characterization via microwave photoconductance decay (MPCD) is given.

Original languageEnglish
Title of host publicationProceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Pages282-284
Number of pages3
DOIs
StatePublished - 2010
Event2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 - Atlanta, GA, United States
Duration: May 23 2010May 27 2010

Publication series

NameProceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

Conference

Conference2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
CountryUnited States
CityAtlanta, GA
Period05/23/1005/27/10

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