High pressure X-ray diffraction study of ReS2

Dongbin Hou, Yanzhang Ma, Jianguo Du, Jinyuan Yan, Cheng Ji, Hongyang Zhu

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The high-pressure behavior of rhenium disulfide (ReS2) has been investigated to 51.0 GPa by in situ synchrotron X-ray diffraction in a diamond anvil cell at room temperature. The results demonstrate that the ReS2 triclinic phase is stable up to 11.3 GPa, at which pressure the ReS2 transforms to a new high-pressure phase, which is tentatively identified with a hexagonal lattice in space group P6m2. The high-pressure phase is stable up to the highest pressure in this study (51.0 GPa) and not quenchable upon decompression to ambient pressure. The compressibility of the triclinic phase exhibits anisotropy, meaning that it is more compressive along interlayer directions than intralayer directions, which demonstrates the properties of the weak interlayer van der Waals interactions and the strong intralayer covalent bonds. The largest change in the unit cell angles with increasing pressures is the increase of β, which indicates a rotation of the sulfur atoms around the rhenium atoms during the compression. Fitting the experimental data of the triclinic phase to the third-order BirchMurnaghan EOS yields a bulk modulus of KOT=23±4 GPa with its pressure derivative K OT′= 29±8, and the second-order yields K OT=49±3 GPa.

Original languageEnglish
Pages (from-to)1571-1575
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume71
Issue number11
DOIs
StatePublished - Nov 2010

Keywords

  • A. Semiconductors
  • C. High pressure
  • C. X-ray diffraction
  • D. Crystal structure
  • D. Phase transitions

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