TY - JOUR
T1 - High pressure study of B12As2
T2 - Electrical transport behavior and the role of grain boundaries
AU - Wang, Qinglin
AU - Liu, Cailong
AU - Ma, Boheng
AU - Gao, Yang
AU - Fitzpatrick, Matthew
AU - Li, Yuqiang
AU - Liu, Bao
AU - Gao, Chunxiao
AU - Ma, Yanzhang
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/1/28
Y1 - 2015/1/28
N2 - Using a diamond anvil cell, the evolutions of alternate-current impedance spectra and direct- current resistivity in B12As2 have been investigated up to 51.9 GPa. The results provide evidence for the existence of grain and grain boundary effects that are separated in the frequency region. The grain boundary resistance shows a relatively smaller contribution to the total resistance above 16.8 GPa. By using the double-Schottky barrier model, the space charge potential was obtained. A pressure-induced inversion of charge defect concentration in the space charge layer was found at 20.7 GPa. The high-temperature resistivity measurements indicate that the transport activation energy is determined by defect energy levels in the band gap.
AB - Using a diamond anvil cell, the evolutions of alternate-current impedance spectra and direct- current resistivity in B12As2 have been investigated up to 51.9 GPa. The results provide evidence for the existence of grain and grain boundary effects that are separated in the frequency region. The grain boundary resistance shows a relatively smaller contribution to the total resistance above 16.8 GPa. By using the double-Schottky barrier model, the space charge potential was obtained. A pressure-induced inversion of charge defect concentration in the space charge layer was found at 20.7 GPa. The high-temperature resistivity measurements indicate that the transport activation energy is determined by defect energy levels in the band gap.
UR - http://www.scopus.com/inward/record.url?scp=84923642497&partnerID=8YFLogxK
U2 - 10.1063/1.4906462
DO - 10.1063/1.4906462
M3 - Article
AN - SCOPUS:84923642497
VL - 117
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
M1 - 045302
ER -