High pressure study of B12As2: Electrical transport behavior and the role of grain boundaries

Qinglin Wang; Cailong Liu; Boheng Ma; Yang Gao; Matthew Fitzpatrick; Yuqiang Li; Bao Liu; Chunxiao Gao; Yanzhang Ma

doi:10.1063/1.4906462

High pressure study of B₁₂As₂: Electrical transport behavior and the role of grain boundaries

Qinglin Wang, Cailong Liu, Boheng Ma, Yang Gao, Matthew Fitzpatrick, Yuqiang Li, Bao Liu, Chunxiao Gao, Yanzhang Ma

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Using a diamond anvil cell, the evolutions of alternate-current impedance spectra and direct- current resistivity in B₁₂As₂ have been investigated up to 51.9 GPa. The results provide evidence for the existence of grain and grain boundary effects that are separated in the frequency region. The grain boundary resistance shows a relatively smaller contribution to the total resistance above 16.8 GPa. By using the double-Schottky barrier model, the space charge potential was obtained. A pressure-induced inversion of charge defect concentration in the space charge layer was found at 20.7 GPa. The high-temperature resistivity measurements indicate that the transport activation energy is determined by defect energy levels in the band gap.

Original language	English
Article number	045302
Journal	Journal of Applied Physics
Volume	117
Issue number	4
DOIs	https://doi.org/10.1063/1.4906462
State	Published - Jan 28 2015

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abstract = "Using a diamond anvil cell, the evolutions of alternate-current impedance spectra and direct- current resistivity in B12As2 have been investigated up to 51.9 GPa. The results provide evidence for the existence of grain and grain boundary effects that are separated in the frequency region. The grain boundary resistance shows a relatively smaller contribution to the total resistance above 16.8 GPa. By using the double-Schottky barrier model, the space charge potential was obtained. A pressure-induced inversion of charge defect concentration in the space charge layer was found at 20.7 GPa. The high-temperature resistivity measurements indicate that the transport activation energy is determined by defect energy levels in the band gap.",

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T2 - Electrical transport behavior and the role of grain boundaries

AU - Wang, Qinglin

AU - Liu, Cailong

AU - Ma, Boheng

AU - Gao, Yang

AU - Fitzpatrick, Matthew

AU - Li, Yuqiang

AU - Liu, Bao

AU - Gao, Chunxiao

AU - Ma, Yanzhang

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N2 - Using a diamond anvil cell, the evolutions of alternate-current impedance spectra and direct- current resistivity in B12As2 have been investigated up to 51.9 GPa. The results provide evidence for the existence of grain and grain boundary effects that are separated in the frequency region. The grain boundary resistance shows a relatively smaller contribution to the total resistance above 16.8 GPa. By using the double-Schottky barrier model, the space charge potential was obtained. A pressure-induced inversion of charge defect concentration in the space charge layer was found at 20.7 GPa. The high-temperature resistivity measurements indicate that the transport activation energy is determined by defect energy levels in the band gap.

AB - Using a diamond anvil cell, the evolutions of alternate-current impedance spectra and direct- current resistivity in B12As2 have been investigated up to 51.9 GPa. The results provide evidence for the existence of grain and grain boundary effects that are separated in the frequency region. The grain boundary resistance shows a relatively smaller contribution to the total resistance above 16.8 GPa. By using the double-Schottky barrier model, the space charge potential was obtained. A pressure-induced inversion of charge defect concentration in the space charge layer was found at 20.7 GPa. The high-temperature resistivity measurements indicate that the transport activation energy is determined by defect energy levels in the band gap.

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High pressure study of B₁₂As₂: Electrical transport behavior and the role of grain boundaries

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