Scanning tunneling microscopy (STM) is an ideal tool to image conducting and semiconducting surfaces with atomic resolution. The technique provides high-resolution images in vacuum or even high-pressure environments. Since STM can be operated at elevated pressures and temperatures, images can be collected in situ under catalytic conditions. In this work, we demonstrate that artifacts can be observed when imaging in situ since reactions can occur on the tip, and care should be taken when analyzing the data obtained.
- Fischer-Tropsch reaction
- High-pressure scanning tunneling microscopy
- Pressure gap
- Step mobile