High-pressure electrical transport behavior in WO 3

Yuqiang Li; Yang Gao; Yonghao Han; Qinglin Wang; Yan Li; Ningning Su; Junkai Zhang; Cailong Liu; Yanzhang Ma; Chunxiao Gao

doi:10.1021/jp210559c

High-pressure electrical transport behavior in WO ₃

Yuqiang Li, Yang Gao, Yonghao Han, Qinglin Wang, Yan Li, Ningning Su, Junkai Zhang, Cailong Liu, Yanzhang Ma, Chunxiao Gao

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The high-pressure electrical transport behavior of microcrystalline tungsten trioxides (WO ₃) was investigated by direct current electrical resistivity measurement and alternate current impedance spectrum techniques in a diamond anvil cell up to 35.5 GPa. Discontinuous changes of electrical resistivity occurred during the pressure induced structure phase transitions at 1.8, 21.2, and 30.4 GPa. The irreversible resistivity reveals that the structure phase transition is not reversible. In addition, the abnormal changes of bulk resistance and transport activation energy at about 3 and 10 GPa are related to the isostructural phase transition reported by previous Raman study. The temperature induced resistivity change indicates that WO ₃ is a semiconductor from ambient pressure to 25.3 GPa.

Original language	English
Pages (from-to)	5209-5214
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	116
Issue number	8
DOIs	https://doi.org/10.1021/jp210559c
State	Published - Mar 1 2012

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title = "High-pressure electrical transport behavior in WO 3 ",

abstract = "The high-pressure electrical transport behavior of microcrystalline tungsten trioxides (WO 3) was investigated by direct current electrical resistivity measurement and alternate current impedance spectrum techniques in a diamond anvil cell up to 35.5 GPa. Discontinuous changes of electrical resistivity occurred during the pressure induced structure phase transitions at 1.8, 21.2, and 30.4 GPa. The irreversible resistivity reveals that the structure phase transition is not reversible. In addition, the abnormal changes of bulk resistance and transport activation energy at about 3 and 10 GPa are related to the isostructural phase transition reported by previous Raman study. The temperature induced resistivity change indicates that WO 3 is a semiconductor from ambient pressure to 25.3 GPa.",

author = "Yuqiang Li and Yang Gao and Yonghao Han and Qinglin Wang and Yan Li and Ningning Su and Junkai Zhang and Cailong Liu and Yanzhang Ma and Chunxiao Gao",

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T1 - High-pressure electrical transport behavior in WO 3

AU - Li, Yuqiang

AU - Gao, Yang

AU - Han, Yonghao

AU - Wang, Qinglin

AU - Li, Yan

AU - Su, Ningning

AU - Zhang, Junkai

AU - Liu, Cailong

AU - Ma, Yanzhang

AU - Gao, Chunxiao

PY - 2012/3/1

Y1 - 2012/3/1

N2 - The high-pressure electrical transport behavior of microcrystalline tungsten trioxides (WO 3) was investigated by direct current electrical resistivity measurement and alternate current impedance spectrum techniques in a diamond anvil cell up to 35.5 GPa. Discontinuous changes of electrical resistivity occurred during the pressure induced structure phase transitions at 1.8, 21.2, and 30.4 GPa. The irreversible resistivity reveals that the structure phase transition is not reversible. In addition, the abnormal changes of bulk resistance and transport activation energy at about 3 and 10 GPa are related to the isostructural phase transition reported by previous Raman study. The temperature induced resistivity change indicates that WO 3 is a semiconductor from ambient pressure to 25.3 GPa.

AB - The high-pressure electrical transport behavior of microcrystalline tungsten trioxides (WO 3) was investigated by direct current electrical resistivity measurement and alternate current impedance spectrum techniques in a diamond anvil cell up to 35.5 GPa. Discontinuous changes of electrical resistivity occurred during the pressure induced structure phase transitions at 1.8, 21.2, and 30.4 GPa. The irreversible resistivity reveals that the structure phase transition is not reversible. In addition, the abnormal changes of bulk resistance and transport activation energy at about 3 and 10 GPa are related to the isostructural phase transition reported by previous Raman study. The temperature induced resistivity change indicates that WO 3 is a semiconductor from ambient pressure to 25.3 GPa.

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