High-pressure electrical transport behavior in WO 3

Yuqiang Li, Yang Gao, Yonghao Han, Qinglin Wang, Yan Li, Ningning Su, Junkai Zhang, Cailong Liu, Yanzhang Ma, Chunxiao Gao

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Abstract

The high-pressure electrical transport behavior of microcrystalline tungsten trioxides (WO 3) was investigated by direct current electrical resistivity measurement and alternate current impedance spectrum techniques in a diamond anvil cell up to 35.5 GPa. Discontinuous changes of electrical resistivity occurred during the pressure induced structure phase transitions at 1.8, 21.2, and 30.4 GPa. The irreversible resistivity reveals that the structure phase transition is not reversible. In addition, the abnormal changes of bulk resistance and transport activation energy at about 3 and 10 GPa are related to the isostructural phase transition reported by previous Raman study. The temperature induced resistivity change indicates that WO 3 is a semiconductor from ambient pressure to 25.3 GPa.

Original languageEnglish
Pages (from-to)5209-5214
Number of pages6
JournalJournal of Physical Chemistry C
Volume116
Issue number8
DOIs
StatePublished - Mar 1 2012

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Li, Y., Gao, Y., Han, Y., Wang, Q., Li, Y., Su, N., Zhang, J., Liu, C., Ma, Y., & Gao, C. (2012). High-pressure electrical transport behavior in WO 3 Journal of Physical Chemistry C, 116(8), 5209-5214. https://doi.org/10.1021/jp210559c