High power, electron-beam induced switching in diamond

R. D. Scarpetti; W. W. Hofer; D. R. Kania; K. H. Schoenbach; R. P. Joshi; C. Molina; R. P. Brinkmann

High power, electron-beam induced switching in diamond

R. D. Scarpetti, W. W. Hofer, D. R. Kania, K. H. Schoenbach, R. P. Joshi, C. Molina, R. P. Brinkmann

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

We are developing a high voltage, high average power, electron-beam controlled diamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 kV, and with high efficiency. This performance is due to the excellent thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchannel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beam energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.

Original language	English
Pages	813-816
Number of pages	4
State	Published - 1993
Event	Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2) - Albuquerque, NM, USA Duration: Jun 21 1993 → Jun 23 1993

Conference

Conference	Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2)
City	Albuquerque, NM, USA
Period	06/21/93 → 06/23/93

Cite this

@conference{7ed55eb80f314587bc6b2fb8e7bf271e,

title = "High power, electron-beam induced switching in diamond",

abstract = "We are developing a high voltage, high average power, electron-beam controlled diamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 kV, and with high efficiency. This performance is due to the excellent thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchannel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beam energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.",

author = "Scarpetti, {R. D.} and Hofer, {W. W.} and Kania, {D. R.} and Schoenbach, {K. H.} and Joshi, {R. P.} and C. Molina and Brinkmann, {R. P.}",

year = "1993",

language = "English",

pages = "813--816",

note = "Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2) ; Conference date: 21-06-1993 Through 23-06-1993",

}

TY - CONF

T1 - High power, electron-beam induced switching in diamond

AU - Scarpetti, R. D.

AU - Hofer, W. W.

AU - Kania, D. R.

AU - Schoenbach, K. H.

AU - Joshi, R. P.

AU - Molina, C.

AU - Brinkmann, R. P.

PY - 1993

Y1 - 1993

N2 - We are developing a high voltage, high average power, electron-beam controlled diamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 kV, and with high efficiency. This performance is due to the excellent thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchannel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beam energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.

AB - We are developing a high voltage, high average power, electron-beam controlled diamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 kV, and with high efficiency. This performance is due to the excellent thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchannel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beam energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.

UR - http://www.scopus.com/inward/record.url?scp=0027904024&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0027904024

SP - 813

EP - 816

T2 - Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2)

Y2 - 21 June 1993 through 23 June 1993

ER -

High power, electron-beam induced switching in diamond

Abstract

Conference

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