High power, electron-beam induced switching in diamond

R. D. Scarpetti, W. W. Hofer, D. R. Kania, K. H. Schoenbach, R. P. Joshi, C. Molina, R. P. Brinkmann

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

We are developing a high voltage, high average power, electron-beam controlled diamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 kV, and with high efficiency. This performance is due to the excellent thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchannel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beam energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.

Original languageEnglish
Pages813-816
Number of pages4
StatePublished - 1993
EventProceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2) - Albuquerque, NM, USA
Duration: Jun 21 1993Jun 23 1993

Conference

ConferenceProceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2)
CityAlbuquerque, NM, USA
Period06/21/9306/23/93

Fingerprint Dive into the research topics of 'High power, electron-beam induced switching in diamond'. Together they form a unique fingerprint.

Cite this