High Performance, Large-Area, 1600V/150 A 4H-SiC DMOSFET for Robust High-Power and High Temperature Applications

Lin Cheng; Anant Agarwal; M Schupbach; D Gajewski; William Ray; James Schrock; Argenis Bilbao; Stephen Bayne; A Lelis; Skip Scozzie

High Performance, Large-Area, 1600V/150 A 4H-SiC DMOSFET for Robust High-Power and High Temperature Applications

Lin Cheng, Anant Agarwal, M Schupbach, D Gajewski, William Ray, James Schrock, Argenis Bilbao, Stephen Bayne, A Lelis, Skip Scozzie

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Original language	English
State	Published - Dec 2013

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@conference{139401f3d69c4ada9fef5a2963686ab7,

title = "High Performance, Large-Area, 1600V/150 A 4H-SiC DMOSFET for Robust High-Power and High Temperature Applications",

author = "Lin Cheng and Anant Agarwal and M Schupbach and D Gajewski and William Ray and James Schrock and Argenis Bilbao and Stephen Bayne and A Lelis and Skip Scozzie",

year = "2013",

month = dec,

language = "English",

}

High Performance, Large-Area, 1600V/150 A 4H-SiC DMOSFET for Robust High-Power and High Temperature Applications

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