High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

Lin Cheng, Anant K. Agarwal, Marcelo Schupbach, Donald A. Gajewski, Daniel J. Lichtenwalner, Vipindas Pala, Sei Hyung Ryu, Jim Richmond, John W. Palmour, William Ray, James Schrock, Argenis Bilbao, Stephen Bayne, Aivars Lelis, Charles Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

In this paper, we report our recently developed 2nd Generation, large-area (56 mm2 with an active conducting area of 40 mm 2) 4H-SiC DMOSFET, which can reliably block 1600 V with very low leakage current under a gate-bias (VG) of 0 V at temperatures up to 200°C. The device also exhibits a low on-resistance (RON) of 12.4 mω at 150 A and VG of 20 V. DC and dynamic switching characteristics of the SiC DMOSFET have also been compared with a commercially available 1200 V/ 200 A rated Si trench gate IGBT. The switching energy of the SiC DMOSFET at 600 V input voltage bus is > 4X lower than that of the Si IGBT at room-temperature and > 7X lower at 150°C. A comprehensive study on intrinsic reliability of this 2nd generation SiC MOSFET has been performed to build consumer confidence and to achieve broad market adoption of this disruptive power switch technology.

Original languageEnglish
Title of host publication2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages47-50
Number of pages4
ISBN (Print)9781467351348
DOIs
StatePublished - 2013
Event2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 - Kanazawa, Japan
Duration: May 26 2013May 30 2013

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
CountryJapan
CityKanazawa
Period05/26/1305/30/13

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    Cheng, L., Agarwal, A. K., Schupbach, M., Gajewski, D. A., Lichtenwalner, D. J., Pala, V., Ryu, S. H., Richmond, J., Palmour, J. W., Ray, W., Schrock, J., Bilbao, A., Bayne, S., Lelis, A., & Scozzie, C. (2013). High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications. In 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 (pp. 47-50). [6694395] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2013.6694395