High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

Lin Cheng; Anant K. Agarwal; Marcelo Schupbach; Donald A. Gajewski; Daniel J. Lichtenwalner; Vipindas Pala; Sei Hyung Ryu; Jim Richmond; John W. Palmour; William Ray; James Schrock; Argenis Bilbao; Stephen Bayne; Aivars Lelis; Charles Scozzie

doi:10.1109/ISPSD.2013.6694395

High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

Lin Cheng, Anant K. Agarwal, Marcelo Schupbach, Donald A. Gajewski, Daniel J. Lichtenwalner, Vipindas Pala, Sei Hyung Ryu, Jim Richmond, John W. Palmour, William Ray, James Schrock, Argenis Bilbao, Stephen Bayne, Aivars Lelis, Charles Scozzie

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

In this paper, we report our recently developed 2^nd Generation, large-area (56 mm² with an active conducting area of 40 mm ²) 4H-SiC DMOSFET, which can reliably block 1600 V with very low leakage current under a gate-bias (V_G) of 0 V at temperatures up to 200°C. The device also exhibits a low on-resistance (R_ON) of 12.4 mω at 150 A and V_G of 20 V. DC and dynamic switching characteristics of the SiC DMOSFET have also been compared with a commercially available 1200 V/ 200 A rated Si trench gate IGBT. The switching energy of the SiC DMOSFET at 600 V input voltage bus is > 4X lower than that of the Si IGBT at room-temperature and > 7X lower at 150°C. A comprehensive study on intrinsic reliability of this 2^nd generation SiC MOSFET has been performed to build consumer confidence and to achieve broad market adoption of this disruptive power switch technology.

Original language	English
Title of host publication	2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	47-50
Number of pages	4
ISBN (Print)	9781467351348
DOIs	https://doi.org/10.1109/ISPSD.2013.6694395
State	Published - 2013
Event	2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 - Kanazawa, Japan Duration: May 26 2013 → May 30 2013

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
Country/Territory	Japan
City	Kanazawa
Period	05/26/13 → 05/30/13

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10.1109/ISPSD.2013.6694395

Cite this

Cheng, L., Agarwal, A. K., Schupbach, M., Gajewski, D. A., Lichtenwalner, D. J., Pala, V., Ryu, S. H., Richmond, J., Palmour, J. W., Ray, W., Schrock, J., Bilbao, A., Bayne, S., Lelis, A., & Scozzie, C. (2013). High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications. In 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 (pp. 47-50). [6694395] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2013.6694395

Cheng, Lin ; Agarwal, Anant K. ; Schupbach, Marcelo et al. / High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications. 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 47-50 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

@inproceedings{d56f9638e7aa4795b3e42019fbd6e747,

title = "High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications",

abstract = "In this paper, we report our recently developed 2nd Generation, large-area (56 mm2 with an active conducting area of 40 mm 2) 4H-SiC DMOSFET, which can reliably block 1600 V with very low leakage current under a gate-bias (VG) of 0 V at temperatures up to 200°C. The device also exhibits a low on-resistance (RON) of 12.4 mω at 150 A and VG of 20 V. DC and dynamic switching characteristics of the SiC DMOSFET have also been compared with a commercially available 1200 V/ 200 A rated Si trench gate IGBT. The switching energy of the SiC DMOSFET at 600 V input voltage bus is > 4X lower than that of the Si IGBT at room-temperature and > 7X lower at 150°C. A comprehensive study on intrinsic reliability of this 2nd generation SiC MOSFET has been performed to build consumer confidence and to achieve broad market adoption of this disruptive power switch technology.",

author = "Lin Cheng and Agarwal, {Anant K.} and Marcelo Schupbach and Gajewski, {Donald A.} and Lichtenwalner, {Daniel J.} and Vipindas Pala and Ryu, {Sei Hyung} and Jim Richmond and Palmour, {John W.} and William Ray and James Schrock and Argenis Bilbao and Stephen Bayne and Aivars Lelis and Charles Scozzie",

year = "2013",

doi = "10.1109/ISPSD.2013.6694395",

language = "English",

isbn = "9781467351348",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "47--50",

booktitle = "2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013",

note = "2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 ; Conference date: 26-05-2013 Through 30-05-2013",

}

Cheng, L, Agarwal, AK, Schupbach, M, Gajewski, DA, Lichtenwalner, DJ, Pala, V, Ryu, SH, Richmond, J, Palmour, JW, Ray, W, Schrock, J, Bilbao, A, Bayne, S, Lelis, A & Scozzie, C 2013, High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications. in 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013., 6694395, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., pp. 47-50, 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013, Kanazawa, Japan, 05/26/13. https://doi.org/10.1109/ISPSD.2013.6694395

High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications. / Cheng, Lin; Agarwal, Anant K.; Schupbach, Marcelo et al.
2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 47-50 6694395 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

AU - Cheng, Lin

AU - Agarwal, Anant K.

AU - Schupbach, Marcelo

AU - Gajewski, Donald A.

AU - Lichtenwalner, Daniel J.

AU - Pala, Vipindas

AU - Ryu, Sei Hyung

AU - Richmond, Jim

AU - Palmour, John W.

AU - Ray, William

AU - Schrock, James

AU - Bilbao, Argenis

AU - Bayne, Stephen

AU - Lelis, Aivars

AU - Scozzie, Charles

PY - 2013

Y1 - 2013

N2 - In this paper, we report our recently developed 2nd Generation, large-area (56 mm2 with an active conducting area of 40 mm 2) 4H-SiC DMOSFET, which can reliably block 1600 V with very low leakage current under a gate-bias (VG) of 0 V at temperatures up to 200°C. The device also exhibits a low on-resistance (RON) of 12.4 mω at 150 A and VG of 20 V. DC and dynamic switching characteristics of the SiC DMOSFET have also been compared with a commercially available 1200 V/ 200 A rated Si trench gate IGBT. The switching energy of the SiC DMOSFET at 600 V input voltage bus is > 4X lower than that of the Si IGBT at room-temperature and > 7X lower at 150°C. A comprehensive study on intrinsic reliability of this 2nd generation SiC MOSFET has been performed to build consumer confidence and to achieve broad market adoption of this disruptive power switch technology.

AB - In this paper, we report our recently developed 2nd Generation, large-area (56 mm2 with an active conducting area of 40 mm 2) 4H-SiC DMOSFET, which can reliably block 1600 V with very low leakage current under a gate-bias (VG) of 0 V at temperatures up to 200°C. The device also exhibits a low on-resistance (RON) of 12.4 mω at 150 A and VG of 20 V. DC and dynamic switching characteristics of the SiC DMOSFET have also been compared with a commercially available 1200 V/ 200 A rated Si trench gate IGBT. The switching energy of the SiC DMOSFET at 600 V input voltage bus is > 4X lower than that of the Si IGBT at room-temperature and > 7X lower at 150°C. A comprehensive study on intrinsic reliability of this 2nd generation SiC MOSFET has been performed to build consumer confidence and to achieve broad market adoption of this disruptive power switch technology.

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U2 - 10.1109/ISPSD.2013.6694395

DO - 10.1109/ISPSD.2013.6694395

M3 - Conference contribution

AN - SCOPUS:84893217231

SN - 9781467351348

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 47

EP - 50

BT - 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013

Y2 - 26 May 2013 through 30 May 2013

ER -

Cheng L, Agarwal AK, Schupbach M, Gajewski DA, Lichtenwalner DJ, Pala V et al. High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications. In 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 47-50. 6694395. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2013.6694395

High performance, large-area, 1600 v / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

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