High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

James Schrock; William Ray; Kevin Lawson; Argenis Bilbao; Stephen Bayne; Shad holt; Lin Cheng; John Palmour; Charles Scozzie

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

James Schrock, William Ray, Kevin Lawson, Argenis Bilbao, Stephen Bayne, Shad holt, Lin Cheng, John Palmour, Charles Scozzie

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2891-2895
Journal	IEEE Transactions on Power Electronics
State	Published - Jun 6 2015

Cite this

@article{c3b14e5de1a74248b253066f72765a2e,

title = "High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions",

author = "James Schrock and William Ray and Kevin Lawson and Argenis Bilbao and Stephen Bayne and Shad holt and Lin Cheng and John Palmour and Charles Scozzie",

year = "2015",

month = jun,

day = "6",

language = "English",

pages = "2891--2895",

journal = "IEEE Transactions on Power Electronics",

}

TY - JOUR

T1 - High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

AU - Schrock, James

AU - Ray, William

AU - Lawson, Kevin

AU - Bilbao, Argenis

AU - Bayne, Stephen

AU - holt, Shad

AU - Cheng, Lin

AU - Palmour, John

AU - Scozzie, Charles

PY - 2015/6/6

Y1 - 2015/6/6

M3 - Article

SP - 2891

EP - 2895

JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

ER -

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Fingerprint

Cite this