High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

James Schrock, William Ray, Kevin Lawson, Argenis Bilbao, Stephen Bayne, Shad holt, Lin Cheng, John Palmour, Charles Scozzie

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)2891-2895
JournalIEEE Transactions on Power Electronics
StatePublished - Jun 6 2015

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