High-mobility stable 1200-V, 150-A 4H-SiC DMOSFET long-term reliability analysis under high current density transient conditions

James A. Schrock, William B. Ray, Kevin Lawson, Argenis Bilbao, Stephen B. Bayne, Shad L. Holt, Lin Cheng, John W. Palmour, Charles Scozzie

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

For SiC DMOSFETs to obtain widespread usage in power electronics their long-term operational ability to handle the stressful transient current and high temperatures common in power electronics needs to be further verified. To determine the long-term reliability of a single 4H-SiC DMOSFET, the effects of extreme high current density were evaluated. The 4H-SiC DMOSFET has an active conducting area of 40 mm2, and is rated for 1200 V and 150 A. The device was electrically stressed by hard-switching transient currents in excess of four times the given rating (> 600 A) corresponding to a current density of 1500 A/cm2. Periodically throughout testing, several device characteristics including RDS(on) and VGS(th) were measured. After 500 000 switching cycles, the device showed a 6.77% decrease in RDS(on), and only a 132-mV decreased in VGS(th). Additionally, the dc characteristics of the device were analyzed from 25 to 150°C and revealed a 200-mV increase in on-state voltage drop at 20 A and a 2-V reduction in VGS(th) at 150°C. These results show this SiC DMOSFET has robust long-term reliability in high-power applications that are susceptible to pulse over currents, such as pulsed power modulators and hard-switched power electronics.

Original languageEnglish
Article number6897959
Pages (from-to)2891-2895
Number of pages5
JournalIEEE Transactions on Power Electronics
Volume30
Issue number6
DOIs
StatePublished - Jun 1 2015

Keywords

  • 4H-SiC
  • DMOSFET
  • High current density
  • Reliability testing

Fingerprint Dive into the research topics of 'High-mobility stable 1200-V, 150-A 4H-SiC DMOSFET long-term reliability analysis under high current density transient conditions'. Together they form a unique fingerprint.

Cite this