TY - GEN
T1 - High-efficiency silicon RF power amplifier design - Current status and future outlook
AU - Lie, D. Y.C.
AU - Tsay, J.
AU - Hall, T.
AU - Nukala, T.
AU - Lopez, J.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/9/27
Y1 - 2016/9/27
N2 - Silicon RF power amplifiers (PAs) are in various RF front end modules (FEMs) today for handset and WLAN applications. Even though III-V semiconductor-based RF PAs can still offer superior frequency and breakdown performance with higher Pout and power-added-efficiency (PAE) and faster time-to-market, silicon-based RF PAs do have the advantages in offering higher monolithic integration with added functionalities (e.g., on-chip digital control and selection on power level, modulation, frequency band, matching, predistortion, etc.), which can translate to lower cost and smaller sizes attractive for broadband multi-mode multi-band handset transmitters. Therefore, some key techniques for designing high-efficiency 4G/5G/WLAN broadband wireless silicon PAs will be discussed.
AB - Silicon RF power amplifiers (PAs) are in various RF front end modules (FEMs) today for handset and WLAN applications. Even though III-V semiconductor-based RF PAs can still offer superior frequency and breakdown performance with higher Pout and power-added-efficiency (PAE) and faster time-to-market, silicon-based RF PAs do have the advantages in offering higher monolithic integration with added functionalities (e.g., on-chip digital control and selection on power level, modulation, frequency band, matching, predistortion, etc.), which can translate to lower cost and smaller sizes attractive for broadband multi-mode multi-band handset transmitters. Therefore, some key techniques for designing high-efficiency 4G/5G/WLAN broadband wireless silicon PAs will be discussed.
KW - 5G
KW - CMOS PA
KW - Digital PA (DPA)
KW - ET-PA
KW - Envelope-tracking (ET)
KW - Internet-of-Thing (IoT)
KW - SiGe PA
KW - power amplifier (PA)
KW - silicon-based PA
KW - stacked-FET PA
UR - http://www.scopus.com/inward/record.url?scp=84994706866&partnerID=8YFLogxK
U2 - 10.1109/RFIT.2016.7578181
DO - 10.1109/RFIT.2016.7578181
M3 - Conference contribution
AN - SCOPUS:84994706866
T3 - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
BT - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Y2 - 24 August 2016 through 26 August 2016
ER -