High-efficiency silicon RF power amplifier design - Current status and future outlook

D. Y.C. Lie, J. Tsay, T. Hall, T. Nukala, J. Lopez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

Silicon RF power amplifiers (PAs) are in various RF front end modules (FEMs) today for handset and WLAN applications. Even though III-V semiconductor-based RF PAs can still offer superior frequency and breakdown performance with higher Pout and power-added-efficiency (PAE) and faster time-to-market, silicon-based RF PAs do have the advantages in offering higher monolithic integration with added functionalities (e.g., on-chip digital control and selection on power level, modulation, frequency band, matching, predistortion, etc.), which can translate to lower cost and smaller sizes attractive for broadband multi-mode multi-band handset transmitters. Therefore, some key techniques for designing high-efficiency 4G/5G/WLAN broadband wireless silicon PAs will be discussed.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
StatePublished - Sep 27 2016
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China
Duration: Aug 24 2016Aug 26 2016

Publication series

NameRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

Conference

Conference2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
CountryTaiwan, Province of China
CityTaipei
Period08/24/1608/26/16

Keywords

  • 5G
  • CMOS PA
  • Digital PA (DPA)
  • ET-PA
  • Envelope-tracking (ET)
  • Internet-of-Thing (IoT)
  • SiGe PA
  • power amplifier (PA)
  • silicon-based PA
  • stacked-FET PA

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  • Cite this

    Lie, D. Y. C., Tsay, J., Hall, T., Nukala, T., & Lopez, J. (2016). High-efficiency silicon RF power amplifier design - Current status and future outlook. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology [7578181] (RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578181