Abstract
In situ x-ray diffraction study of the hexagonal 6H SiC under pressure and shear in rotational diamond anvil cell is performed that reveals phase transformation to the new high-density amorphous (hda) phase SiC. In contrast to known low-density amorphous SiC, hda-SiC is promoted by pressure and unstable under pressure release. The critical combination of pressure ∼30 GPa and rotation of an anvil of 2160°that causes disordering is determined.
Original language | English |
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Article number | 054114 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 85 |
Issue number | 5 |
DOIs | |
State | Published - Feb 29 2012 |