HfO2 gate dielectric with 0.5 nm equivalent oxide thickness

H. Harris, K. Choi, N. Mehta, A. Chandolu, N. Biswas, G. Kipshidze, S. Nikishin, S. Gangopadhyay, H. Temkin

Research output: Contribution to journalArticlepeer-review

85 Scopus citations


Hafnium dioxide films have been deposited using reactive electron beam evaporation in oxygen on hydrogenated Si(100) surfaces. The capacitance-voltage curves of as-deposited metal(Ti)-insulator-semiconductor structures exhibited large hysteresis and frequency dispersion. With post-deposition annealing in hydrogen at 300°C, the frequency dispersion decreased to less than 1%/decade, while the hysteresis was reduced to 20 mV at flatband. An equivalent oxide thickness of 0.5 nm was achieved for HfO2 thickness of 3.0 nm. We attribute this result to a combination of pristine hydrogen saturated silicon surfaces, room temperature dielectric deposition, and low temperature hydrogen annealing.

Original languageEnglish
Pages (from-to)1065-1067
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - Aug 5 2002


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