TY - GEN
T1 - Hexagonal boron nitride for deep UV photonics
AU - Jiang, Hongxing
AU - Lin, Jingyu
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/9/9
Y1 - 2015/9/9
N2 - Hexagonal boron nitride (h-BN) possesses extraordinary physical properties including wide bandgap (Eg ∼ 6.5 eV), high temperature stability and corrosion resistance, and large optical absorption and emission, and thermal neutron capture cross section. In addition, h-BN is a material with a very low dielectric constant, but having a very high dielectric strength. Due to its similar lattice constant with graphene, h-BN is an ideal template and dielectric separation layer in graphene devices. Furthermore, having a hexagonal layered-structure, h-BN represents an ideal platform for probing fundamental 2D properties in semiconductors. In comparison to AlN, p-type h-BN appears to be easier to obtain [1-3]. Currently, the most outstanding issue for achieving high performance deep UV emitters based on III-nitrides is the low p-type conductivity of Al-rich AlGaN. This issue is caused by the large acceptor activation energies (EA) in Al-rich AlxGa1-xN (as large as 500 meV in AlN) [3-6]. The attainment of p-type h-BN could potentially overcome the intrinsic problem of low p-type conductivity in Al-rich AlGaN for deep UV photonic devices. Wafer-scale h-BN epilayers (up to 2-inch in diameter) have been successfully synthesized by MOCVD [1-3, 7-9].
AB - Hexagonal boron nitride (h-BN) possesses extraordinary physical properties including wide bandgap (Eg ∼ 6.5 eV), high temperature stability and corrosion resistance, and large optical absorption and emission, and thermal neutron capture cross section. In addition, h-BN is a material with a very low dielectric constant, but having a very high dielectric strength. Due to its similar lattice constant with graphene, h-BN is an ideal template and dielectric separation layer in graphene devices. Furthermore, having a hexagonal layered-structure, h-BN represents an ideal platform for probing fundamental 2D properties in semiconductors. In comparison to AlN, p-type h-BN appears to be easier to obtain [1-3]. Currently, the most outstanding issue for achieving high performance deep UV emitters based on III-nitrides is the low p-type conductivity of Al-rich AlGaN. This issue is caused by the large acceptor activation energies (EA) in Al-rich AlxGa1-xN (as large as 500 meV in AlN) [3-6]. The attainment of p-type h-BN could potentially overcome the intrinsic problem of low p-type conductivity in Al-rich AlGaN for deep UV photonic devices. Wafer-scale h-BN epilayers (up to 2-inch in diameter) have been successfully synthesized by MOCVD [1-3, 7-9].
UR - http://www.scopus.com/inward/record.url?scp=84960480617&partnerID=8YFLogxK
U2 - 10.1109/PHOSST.2015.7248231
DO - 10.1109/PHOSST.2015.7248231
M3 - Conference contribution
AN - SCOPUS:84960480617
T3 - 2015 IEEE Summer Topicals Meeting Series, SUM 2015
SP - 133
EP - 134
BT - 2015 IEEE Summer Topicals Meeting Series, SUM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE Summer Topicals Meeting Series, SUM 2015
Y2 - 13 July 2015 through 15 July 2015
ER -