Hexagonal boron nitride for deep UV photonics

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Hexagonal boron nitride (h-BN) possesses extraordinary physical properties including wide bandgap (Eg ∼ 6.5 eV), high temperature stability and corrosion resistance, and large optical absorption and emission, and thermal neutron capture cross section. In addition, h-BN is a material with a very low dielectric constant, but having a very high dielectric strength. Due to its similar lattice constant with graphene, h-BN is an ideal template and dielectric separation layer in graphene devices. Furthermore, having a hexagonal layered-structure, h-BN represents an ideal platform for probing fundamental 2D properties in semiconductors. In comparison to AlN, p-type h-BN appears to be easier to obtain [1-3]. Currently, the most outstanding issue for achieving high performance deep UV emitters based on III-nitrides is the low p-type conductivity of Al-rich AlGaN. This issue is caused by the large acceptor activation energies (EA) in Al-rich AlxGa1-xN (as large as 500 meV in AlN) [3-6]. The attainment of p-type h-BN could potentially overcome the intrinsic problem of low p-type conductivity in Al-rich AlGaN for deep UV photonic devices. Wafer-scale h-BN epilayers (up to 2-inch in diameter) have been successfully synthesized by MOCVD [1-3, 7-9].

Original languageEnglish
Title of host publication2015 IEEE Summer Topicals Meeting Series, SUM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781479974689
StatePublished - Sep 9 2015
EventIEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas
Duration: Jul 13 2015Jul 15 2015

Publication series

Name2015 IEEE Summer Topicals Meeting Series, SUM 2015


ConferenceIEEE Summer Topicals Meeting Series, SUM 2015


Dive into the research topics of 'Hexagonal boron nitride for deep UV photonics'. Together they form a unique fingerprint.

Cite this