Hexagonal boron nitride: Epitaxial growth and device applications

Avisek Maity, Sam J Grenadier, Jing Li, Jingyu Lin, Hongxing Jiang

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Progress in Quantum Electronics
DOIs	https://doi.org/10.1016/j.pquantelec.2020.100302
State	Published - Nov 5 2020

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title = "Hexagonal boron nitride: Epitaxial growth and device applications",

author = "Avisek Maity and Grenadier, {Sam J} and Jing Li and Jingyu Lin and Hongxing Jiang",

year = "2020",

month = nov,

day = "5",

doi = "10.1016/j.pquantelec.2020.100302",

language = "English",

journal = "Progress in Quantum Electronics",

issn = "0079-6727",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Hexagonal boron nitride: Epitaxial growth and device applications

AU - Maity, Avisek

AU - Grenadier, Sam J

AU - Li, Jing

AU - Lin, Jingyu

AU - Jiang, Hongxing

PY - 2020/11/5

Y1 - 2020/11/5

U2 - 10.1016/j.pquantelec.2020.100302

DO - 10.1016/j.pquantelec.2020.100302

M3 - Article

JO - Progress in Quantum Electronics

JF - Progress in Quantum Electronics

SN - 0079-6727

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