Hexagonal boron nitride epilayers for deep UV photonics

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Hexagonal boron nitride (h-BN) possesses extraordinary physical properties including wide bandgap, high temperature stability and corrosion resistance, and large optical absorption and thermal neutron capture cross section. Furthermore, h-BN is also an ideal platform for probing fundamental 2D properties in semiconductors. In comparison to AlN, p-type h-BN appears to be easier to obtain [1-4].

Original languageEnglish
Title of host publicationSummer Topicals Meeting Series, SUM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages47-48
Number of pages2
ISBN (Electronic)9781509065707
DOIs
StatePublished - Aug 17 2017
Event2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017 - San Juan, Puerto Rico
Duration: Jul 10 2017Jul 12 2017

Publication series

NameSummer Topicals Meeting Series, SUM 2017

Conference

Conference2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017
CountryPuerto Rico
CitySan Juan
Period07/10/1707/12/17

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