TY - GEN
T1 - Hexagonal boron nitride epilayers for deep UV photonics
AU - Jiang, H. X.
AU - Lin, J. Y.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/17
Y1 - 2017/8/17
N2 - Hexagonal boron nitride (h-BN) possesses extraordinary physical properties including wide bandgap, high temperature stability and corrosion resistance, and large optical absorption and thermal neutron capture cross section. Furthermore, h-BN is also an ideal platform for probing fundamental 2D properties in semiconductors. In comparison to AlN, p-type h-BN appears to be easier to obtain [1-4].
AB - Hexagonal boron nitride (h-BN) possesses extraordinary physical properties including wide bandgap, high temperature stability and corrosion resistance, and large optical absorption and thermal neutron capture cross section. Furthermore, h-BN is also an ideal platform for probing fundamental 2D properties in semiconductors. In comparison to AlN, p-type h-BN appears to be easier to obtain [1-4].
UR - http://www.scopus.com/inward/record.url?scp=85029356634&partnerID=8YFLogxK
U2 - 10.1109/PHOSST.2017.8012644
DO - 10.1109/PHOSST.2017.8012644
M3 - Conference contribution
AN - SCOPUS:85029356634
T3 - Summer Topicals Meeting Series, SUM 2017
SP - 47
EP - 48
BT - Summer Topicals Meeting Series, SUM 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017
Y2 - 10 July 2017 through 12 July 2017
ER -