Heat flow and defects in semiconductors: Beyond the phonon scattering assumption

Stefan K. Estreicher, T. Michael Gibbons, M. Bahadir Bebek, Alexander L. Cardona

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

It is universally accepted that defects in materials scatter thermal phonons, and that this scattering is the reason why defects reduce the flow of heat relative to the defect-free material. However, ab-initio molecular-dynamics simulations which include defect dynamics show that the interactions between thermal phonons and defects involve the coupling between bulk (delocalized) and defect-related (localized) oscillators. Defects introduce Spatially-Localized Modes (SLMs) which trap thermal phonons for dozens to hundreds of periods of oscillation, much longer than the lifetimes of bulk excitations of the same frequency. When a phonon traps in a SLM, momentum is lost and the decay of localized phonons does not depend on the origin of the excitation but on the availability of receiving modes. This strongly suggests that carefully selected interfaces and/or δ- layers can be used to predict and control the flow of heat.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XVI
EditorsPeter Pichler, Peter Pichler
PublisherTrans Tech Publications Ltd
Pages335-343
Number of pages9
ISBN (Print)9783038356080
DOIs
StatePublished - 2016
Event16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, Germany
Duration: Sep 20 2015Sep 25 2015

Publication series

NameSolid State Phenomena
Volume242
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Conference

Conference16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
CountryGermany
CityBad Staffelstein
Period09/20/1509/25/15

Keywords

  • Ab-initio molecular dynamics
  • Defects
  • Heat flow
  • Heterojunctions
  • Si nanowire

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