TY - JOUR
T1 - Heat flow across an oxide layer in Si
AU - Stanley, Christopher M.
AU - Estreicher, Stefan K.
N1 - Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/7/1
Y1 - 2017/7/1
N2 - Oxide layers are ubiquitous in Si technology including nanostructures. How such layers interact with heat flow is not well understood. In this contribution, we present the preliminary results of ab initio molecular-dynamic simulations of such interactions. We show that oxide layers reflect (part of) the incoming heat, which results in the accumulation of energy on the warmer side of the layer for longer times than without the presence of the oxide. The results are consistent with earlier predictions that phonon-defect interactions are determined by the vibrational properties of the defect (here, the oxide layer).
AB - Oxide layers are ubiquitous in Si technology including nanostructures. How such layers interact with heat flow is not well understood. In this contribution, we present the preliminary results of ab initio molecular-dynamic simulations of such interactions. We show that oxide layers reflect (part of) the incoming heat, which results in the accumulation of energy on the warmer side of the layer for longer times than without the presence of the oxide. The results are consistent with earlier predictions that phonon-defect interactions are determined by the vibrational properties of the defect (here, the oxide layer).
KW - first-principles calculations
KW - heat flow
KW - oxides
KW - silicon
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=85019770128&partnerID=8YFLogxK
U2 - 10.1002/pssa.201700204
DO - 10.1002/pssa.201700204
M3 - Article
AN - SCOPUS:85019770128
VL - 214
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 7
M1 - 1700204
ER -