Hard-Switch Stressing of Vertical-channel implanted-Gate SiC JFETs

Stephen Bayne, Kevin Lawson, G Alvarez, Victor Veliadis, H Ha, D Urciuoli, Skip Scozzie

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	86-88
Journal	IEEE Electron Device letters
State	Published - Nov 2011

Cite this

@article{6262ec2442934e94a712d02840eb3741,

title = "Hard-Switch Stressing of Vertical-channel implanted-Gate SiC JFETs",

author = "Stephen Bayne and Kevin Lawson and G Alvarez and Victor Veliadis and H Ha and D Urciuoli and Skip Scozzie",

year = "2011",

month = nov,

language = "English",

pages = "86--88",

journal = "IEEE Electron Device letters",

}