Half-bridge inverter using 4H-SiC gate turn-off thyristors

C. W. Tipton; S. B. Bayne; T. E. Griffin; C. J. Scozzie; B. Geil; A. K. Agarwal; J. Richmond

doi:10.1109/55.992836

Half-bridge inverter using 4H-SiC gate turn-off thyristors

C. W. Tipton, S. B. Bayne, T. E. Griffin, C. J. Scozzie, B. Geil, A. K. Agarwal, J. Richmond

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices.

Original language	English
Pages (from-to)	194-196
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	4
DOIs	https://doi.org/10.1109/55.992836
State	Published - Apr 2002

Keywords

Gate turn-off thyristor
Half-bridge inverter
Power circuits
Silicon carbide
Thyristor circuits

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10.1109/55.992836

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abstract = "This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm2) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices.",

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AU - Tipton, C. W.

AU - Bayne, S. B.

AU - Griffin, T. E.

AU - Scozzie, C. J.

AU - Geil, B.

AU - Agarwal, A. K.

AU - Richmond, J.

PY - 2002/4

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N2 - This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm2) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices.

AB - This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm2) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices.

KW - Gate turn-off thyristor

KW - Half-bridge inverter

KW - Power circuits

KW - Silicon carbide

KW - Thyristor circuits

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JF - IEEE Electron Device Letters

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Half-bridge inverter using 4H-SiC gate turn-off thyristors

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