Half-bridge inverter using 4H-SiC gate turn-off thyristors

C. W. Tipton, S. B. Bayne, T. E. Griffin, C. J. Scozzie, B. Geil, A. K. Agarwal, J. Richmond

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm2) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices.

Original languageEnglish
Pages (from-to)194-196
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number4
DOIs
StatePublished - Apr 2002

Keywords

  • Gate turn-off thyristor
  • Half-bridge inverter
  • Power circuits
  • Silicon carbide
  • Thyristor circuits

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