Growth of single phase GaAs1-xNx with high nitrogen concentration by metal-organic molecular beam epitaxy

Y. Qiu, S. A. Nikishin, H. Temkin, N. N. Faleev, Yu A. Kudriavtsev

Research output: Contribution to journalArticle

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Abstract

High quality layers of GaAs1-xNx were grown on (001)GaAs by metal-organic molecular beam epitaxy. The growth conditions, and especially the nitrogen to arsenic flux ratio, were carefully explored to assure epitaxial crystal growth. We show well behaved and reproducible growth of single phase GaAs1-xNx with the GaN mole fraction as high as x=0.10. The nitrogen content of epitaxial layers was determined directly by secondary ion mass spectroscopy and high resolution x-ray diffraction.

Original languageEnglish
Pages (from-to)3242-3244
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number24
DOIs
StatePublished - Jun 16 1997

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