Growth of III-nitride quantum structures for device applications

Sergey Nikishin, Mark Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Using GSMBE with ammonia on (0001) sapphire substrates, AlN/AlGaN nanostructured short period superlattices (SPSLs), with respective well and barrier thickness from 0.5 to 1 nm and from 0.75 to 1.5 nm, have been shown to have energy gaps in the deep UV suitable for light emitting diodes (LEDs) and photodetectors (PDs) operating down to 247 nm. Performance of LEDs and PDs is limited by factors including efficiency of radiative recombination and absorption in the active region and electrical resistivity of p-type wide bandgap SPSLs. Based on MOVPE, we have used selective area epitixy (SAE) to grow InGaN/GaN quantum structures. By patterning SiO2 hard mask materials on planar sapphire substrates, we have grown various shapes including pyramidal stripes with InxGa1-xN multiple quantum wells. The structures at the apex are found to have very high In content with corresponding optical emission in the green wavelength range and excellent uniformity.

Original languageEnglish
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages31-36
Number of pages6
DOIs
StatePublished - 2010
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: Aug 17 2010Aug 20 2010

Publication series

Name2010 10th IEEE Conference on Nanotechnology, NANO 2010

Conference

Conference2010 10th IEEE Conference on Nanotechnology, NANO 2010
CountryKorea, Republic of
CityIlsan, Gyeonggi-Do
Period08/17/1008/20/10

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