Growth of III-nitride photonic structures on large area silicon substrates

J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.2199492

Growth of III-nitride photonic structures on large area silicon substrates

J. Li, J. Y. Lin, H. X. Jiang

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Abstract

We report on the growth of high quality aluminum nitride (AlN) and gallium nitride (GaN) epilayers on large area (6 in. diameter) silicon (111) substrates by metal organic chemical vapor deposition. We have demonstrated the feasibility of growing crack-free high quality III-nitride photonic structures and devices on 6 inch Si substrates through the fabrication of blue light emitting diodes based upon nitride multiple quantum wells with high performance. The demonstration further enhances the prospects for achieving photonic integrated circuits based upon nitride-on-Si material system.

Original language	English
Article number	171909
Journal	Applied Physics Letters
Volume	88
Issue number	17
DOIs	https://doi.org/10.1063/1.2199492
State	Published - 2006

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title = "Growth of III-nitride photonic structures on large area silicon substrates",

abstract = "We report on the growth of high quality aluminum nitride (AlN) and gallium nitride (GaN) epilayers on large area (6 in. diameter) silicon (111) substrates by metal organic chemical vapor deposition. We have demonstrated the feasibility of growing crack-free high quality III-nitride photonic structures and devices on 6 inch Si substrates through the fabrication of blue light emitting diodes based upon nitride multiple quantum wells with high performance. The demonstration further enhances the prospects for achieving photonic integrated circuits based upon nitride-on-Si material system.",

author = "J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The research is supported by NSF Grant Nos. DMI-0450314 and DMR-0203373.",

year = "2006",

doi = "10.1063/1.2199492",

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volume = "88",

journal = "Applied Physics Letters",

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T1 - Growth of III-nitride photonic structures on large area silicon substrates

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The research is supported by NSF Grant Nos. DMI-0450314 and DMR-0203373.

PY - 2006

Y1 - 2006

N2 - We report on the growth of high quality aluminum nitride (AlN) and gallium nitride (GaN) epilayers on large area (6 in. diameter) silicon (111) substrates by metal organic chemical vapor deposition. We have demonstrated the feasibility of growing crack-free high quality III-nitride photonic structures and devices on 6 inch Si substrates through the fabrication of blue light emitting diodes based upon nitride multiple quantum wells with high performance. The demonstration further enhances the prospects for achieving photonic integrated circuits based upon nitride-on-Si material system.

AB - We report on the growth of high quality aluminum nitride (AlN) and gallium nitride (GaN) epilayers on large area (6 in. diameter) silicon (111) substrates by metal organic chemical vapor deposition. We have demonstrated the feasibility of growing crack-free high quality III-nitride photonic structures and devices on 6 inch Si substrates through the fabrication of blue light emitting diodes based upon nitride multiple quantum wells with high performance. The demonstration further enhances the prospects for achieving photonic integrated circuits based upon nitride-on-Si material system.

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U2 - 10.1063/1.2199492

DO - 10.1063/1.2199492

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VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171909

ER -

Growth of III-nitride photonic structures on large area silicon substrates

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