Growth of high quality InN on production style PA-MBE system

I. Gherasoiu, M. O'Steen, T. Bird, D. Gotthold, A. Chandolu, D. Y. Song, S. X. Xu, M. Holtz, S. A. Nikishin, W. J. Schaff

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

We have demonstrated step-flow growth mode of InN, with monolayer height terrace steps (0.281 nm), using a production-style PA-MBE system, GEN200®. The surface morphology exhibits the step-flow features on relatively large areas and the RMS roughness over an area of 5 x 5 μm2 is 1.4 nm. We also investigated the consequences of In droplets formation during the growth and we have found that the vapor-liquid-solid growth mechanism generates defective layer areas underneath droplets that have been formed early in the growth process. The Hall mobility of 1μm thick InN layers, grown in such step-flow mode is slightly higher than 1400 cm2/Vs while for other growth conditions we have obtained mobility as high as 1904 cm2/Vs at room temperature. The samples exhibit high intensity photoluminescence spectra with a band edge that shifts with free-carrier concentration. For the lowest carrier concentration of 5.6×1017 cm-3 we observe PL emission at ∼0.64 eV.

Original languageEnglish
Pages (from-to)1642-1644
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: Sep 16 2007Sep 21 2007

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