We have demonstrated step-flow growth mode of InN, with monolayer height terrace steps (0.281 nm), using a production-style PA-MBE system, GEN200®. The surface morphology exhibits the step-flow features on relatively large areas and the RMS roughness over an area of 5 x 5 μm2 is 1.4 nm. We also investigated the consequences of In droplets formation during the growth and we have found that the vapor-liquid-solid growth mechanism generates defective layer areas underneath droplets that have been formed early in the growth process. The Hall mobility of 1μm thick InN layers, grown in such step-flow mode is slightly higher than 1400 cm2/Vs while for other growth conditions we have obtained mobility as high as 1904 cm2/Vs at room temperature. The samples exhibit high intensity photoluminescence spectra with a band edge that shifts with free-carrier concentration. For the lowest carrier concentration of 5.6×1017 cm-3 we observe PL emission at ∼0.64 eV.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - 2008|
|Event||7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States|
Duration: Sep 16 2007 → Sep 21 2007