TY - JOUR
T1 - Growth of high quality InN on production style PA-MBE system
AU - Gherasoiu, I.
AU - O'Steen, M.
AU - Bird, T.
AU - Gotthold, D.
AU - Chandolu, A.
AU - Song, D. Y.
AU - Xu, S. X.
AU - Holtz, M.
AU - Nikishin, S. A.
AU - Schaff, W. J.
PY - 2008
Y1 - 2008
N2 - We have demonstrated step-flow growth mode of InN, with monolayer height terrace steps (0.281 nm), using a production-style PA-MBE system, GEN200®. The surface morphology exhibits the step-flow features on relatively large areas and the RMS roughness over an area of 5 x 5 μm2 is 1.4 nm. We also investigated the consequences of In droplets formation during the growth and we have found that the vapor-liquid-solid growth mechanism generates defective layer areas underneath droplets that have been formed early in the growth process. The Hall mobility of 1μm thick InN layers, grown in such step-flow mode is slightly higher than 1400 cm2/Vs while for other growth conditions we have obtained mobility as high as 1904 cm2/Vs at room temperature. The samples exhibit high intensity photoluminescence spectra with a band edge that shifts with free-carrier concentration. For the lowest carrier concentration of 5.6×1017 cm-3 we observe PL emission at ∼0.64 eV.
AB - We have demonstrated step-flow growth mode of InN, with monolayer height terrace steps (0.281 nm), using a production-style PA-MBE system, GEN200®. The surface morphology exhibits the step-flow features on relatively large areas and the RMS roughness over an area of 5 x 5 μm2 is 1.4 nm. We also investigated the consequences of In droplets formation during the growth and we have found that the vapor-liquid-solid growth mechanism generates defective layer areas underneath droplets that have been formed early in the growth process. The Hall mobility of 1μm thick InN layers, grown in such step-flow mode is slightly higher than 1400 cm2/Vs while for other growth conditions we have obtained mobility as high as 1904 cm2/Vs at room temperature. The samples exhibit high intensity photoluminescence spectra with a band edge that shifts with free-carrier concentration. For the lowest carrier concentration of 5.6×1017 cm-3 we observe PL emission at ∼0.64 eV.
UR - http://www.scopus.com/inward/record.url?scp=77951214943&partnerID=8YFLogxK
U2 - 10.1002/pssc.200778561
DO - 10.1002/pssc.200778561
M3 - Conference article
AN - SCOPUS:77951214943
SN - 1862-6351
VL - 5
SP - 1642
EP - 1644
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 6
T2 - 7th International Conference of Nitride Semiconductors, ICNS-7
Y2 - 16 September 2007 through 21 September 2007
ER -