GaN was grown on ZnO/Al2O3 substrate by LP-MOCVD, and its characteristics were studied. The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer. The main photoluminescence peak of GaN epitaxial layer moves to blue spectrum, which has been confirmed that diffusing of Zn in ZnO layer into GaN is responsible. The diffusion coefficient of Zn in GaN at 1050°C is valued as 8.6×10-14cm2/s.
|Number of pages||5|
|Journal||Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors|
|State||Published - Aug 1999|