Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

Xiangjun Mao; Zhijian Yang; Jing Li; Jianqin Qu; Guoyi Zhang; Zhizhen Ye; Jianguang Li; Lei Wang; Binhui Zhao

Growth of GaN single crystal film on ZnO/Al₂O₃ substrate and its characteristics

Xiangjun Mao, Zhijian Yang, Jing Li, Jianqin Qu, Guoyi Zhang, Zhizhen Ye, Jianguang Li, Lei Wang, Binhui Zhao

Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

GaN was grown on ZnO/Al₂O₃ substrate by LP-MOCVD, and its characteristics were studied. The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer. The main photoluminescence peak of GaN epitaxial layer moves to blue spectrum, which has been confirmed that diffusing of Zn in ZnO layer into GaN is responsible. The diffusion coefficient of Zn in GaN at 1050°C is valued as 8.6×10^-14cm²/s.

Original language	English
Pages (from-to)	639-643
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	20
Issue number	8
State	Published - Aug 1999

Cite this

@article{c50fcb99cf4a44e5ae960037fec1b9f2,

title = "Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics",

abstract = "GaN was grown on ZnO/Al2O3 substrate by LP-MOCVD, and its characteristics were studied. The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer. The main photoluminescence peak of GaN epitaxial layer moves to blue spectrum, which has been confirmed that diffusing of Zn in ZnO layer into GaN is responsible. The diffusion coefficient of Zn in GaN at 1050°C is valued as 8.6×10-14cm2/s.",

author = "Xiangjun Mao and Zhijian Yang and Jing Li and Jianqin Qu and Guoyi Zhang and Zhizhen Ye and Jianguang Li and Lei Wang and Binhui Zhao",

year = "1999",

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language = "English",

volume = "20",

pages = "639--643",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

AU - Mao, Xiangjun

AU - Yang, Zhijian

AU - Li, Jing

AU - Qu, Jianqin

AU - Zhang, Guoyi

AU - Ye, Zhizhen

AU - Li, Jianguang

AU - Wang, Lei

AU - Zhao, Binhui

PY - 1999/8

Y1 - 1999/8

N2 - GaN was grown on ZnO/Al2O3 substrate by LP-MOCVD, and its characteristics were studied. The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer. The main photoluminescence peak of GaN epitaxial layer moves to blue spectrum, which has been confirmed that diffusing of Zn in ZnO layer into GaN is responsible. The diffusion coefficient of Zn in GaN at 1050°C is valued as 8.6×10-14cm2/s.

AB - GaN was grown on ZnO/Al2O3 substrate by LP-MOCVD, and its characteristics were studied. The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer. The main photoluminescence peak of GaN epitaxial layer moves to blue spectrum, which has been confirmed that diffusing of Zn in ZnO layer into GaN is responsible. The diffusion coefficient of Zn in GaN at 1050°C is valued as 8.6×10-14cm2/s.

UR - http://www.scopus.com/inward/record.url?scp=0033171806&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033171806

SN - 0253-4177

VL - 20

SP - 639

EP - 643

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 8

ER -

Growth of GaN single crystal film on ZnO/Al₂O₃ substrate and its characteristics

Abstract

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