Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

Xiangjun Mao, Zhijian Yang, Jing Li, Jianqin Qu, Guoyi Zhang, Zhizhen Ye, Jianguang Li, Lei Wang, Binhui Zhao

Research output: Contribution to journalArticle

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Abstract

GaN was grown on ZnO/Al2O3 substrate by LP-MOCVD, and its characteristics were studied. The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer. The main photoluminescence peak of GaN epitaxial layer moves to blue spectrum, which has been confirmed that diffusing of Zn in ZnO layer into GaN is responsible. The diffusion coefficient of Zn in GaN at 1050°C is valued as 8.6×10-14cm2/s.

Original languageEnglish
Pages (from-to)639-643
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume20
Issue number8
StatePublished - Aug 1999

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    Mao, X., Yang, Z., Li, J., Qu, J., Zhang, G., Ye, Z., Li, J., Wang, L., & Zhao, B. (1999). Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 20(8), 639-643.