Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

S. A. Nikishin, N. N. Faleev, A. S. Zubrilov, V. G. Antipov, H. Temkin

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Abstract

Gas source molecular beam epitaxy with ammonia was used to grow AlxGa1-xN on Si(111). Three types of buffer layers, containing AlN, AlGaN/AlN, and AlGaN/GaN short period superlattices, were used and their effectiveness evaluated by x-ray diffraction. We determined that a combination of AlN buffer layer, prepared under the two-dimensional growth mode, with a short period superlattice of AlGaN/GaN results in the highest quality AlGaN. Under optimized growth conditions, x-ray diffraction coherence length almost equal to the layer thickness was obtained for low Al content layers. The normalized coherence length was reduced to ∼0.4 for x=0.66 and it increased again to ∼0.75 in AlN. From room temperature band edge cathodoluminescence of AlGaN grown on Si(111) we determined the alloy bowing coefficient of b=1.5 eV, in good agreement with previous results obtained by absorption measurements.

Original languageEnglish
Pages (from-to)3028-3030
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number21
DOIs
StatePublished - May 22 2000

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    Nikishin, S. A., Faleev, N. N., Zubrilov, A. S., Antipov, V. G., & Temkin, H. (2000). Growth of AlGaN on Si(111) by gas source molecular beam epitaxy. Applied Physics Letters, 76(21), 3028-3030. https://doi.org/10.1063/1.126568