Growth of 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy

P. Thiagarajan, A. A. Bernussi, H. Temkin, G. Y. Robinson, A. M. Sergent, R. A. Logan

Research output: Contribution to journalArticle

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Abstract

The optimization of growth conditions for high quality 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy is reported. Measurements of photoluminescence intensity and threshold currents of highly strained InAsP/InGaAsP multiple quantum well (MQW) lasers indicate an optimum growth temperature substantially lower than that for conventional 1.3 μm InGaAsP quaternary lasers. Broad-area laser structures grown under the optimum conditions exhibited threshold current densities as low as 400 A/cm2. Buried heterostructures with uncoated facets exhibited threshold currents as low as 5.0 mA and internal losses of 8.0 cm-1.

Original languageEnglish
Pages (from-to)3676
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995

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