Growth and photoluminescence studies of Zn-doped AlN epilayers

N. Nepal; M. L. Nakarmi; H. U. Jang; J. Y. Lin; H. X. Jiang

doi:10.1063/1.2387869

Growth and photoluminescence studies of Zn-doped AlN epilayers

N. Nepal, M. L. Nakarmi, H. U. Jang, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

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Abstract

Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy has been employed to study Zn-doped AlN epilayers grown by metal-organic chemical vapor deposition. The PL spectra of Zn-doped AlN epilayer exhibited two impurity emission lines at 5.40 and 4.50 eV, which were absent in undoped epilayers and assigned to the transitions of free electrons and electrons bound to nitrogen vacancies with three positive charges (0.90 eV deep) to the Zn0 acceptors. By comparing PL spectra of Zn- and Mg-doped AlN epilayers with undoped epilayers, it was deduced that Zn energy level is about 0.74 eV, which is about 0.23 eV deeper than the Mg energy level (0.51 eV) in AlN. It is thus concluded that contrary to theoretical prediction, Zn would not be a better candidate than Mg as an acceptor dopant in AlN.

Original language	English
Article number	192111
Journal	Applied Physics Letters
Volume	89
Issue number	19
DOIs	https://doi.org/10.1063/1.2387869
State	Published - 2006

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title = "Growth and photoluminescence studies of Zn-doped AlN epilayers",

abstract = "Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy has been employed to study Zn-doped AlN epilayers grown by metal-organic chemical vapor deposition. The PL spectra of Zn-doped AlN epilayer exhibited two impurity emission lines at 5.40 and 4.50 eV, which were absent in undoped epilayers and assigned to the transitions of free electrons and electrons bound to nitrogen vacancies with three positive charges (0.90 eV deep) to the Zn0 acceptors. By comparing PL spectra of Zn- and Mg-doped AlN epilayers with undoped epilayers, it was deduced that Zn energy level is about 0.74 eV, which is about 0.23 eV deeper than the Mg energy level (0.51 eV) in AlN. It is thus concluded that contrary to theoretical prediction, Zn would not be a better candidate than Mg as an acceptor dopant in AlN.",

author = "N. Nepal and Nakarmi, {M. L.} and Jang, {H. U.} and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The authors would like to acknowledge supports provided by DOE (96ER45604) for this work.",

year = "2006",

doi = "10.1063/1.2387869",

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journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Growth and photoluminescence studies of Zn-doped AlN epilayers

AU - Nepal, N.

AU - Nakarmi, M. L.

AU - Jang, H. U.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The authors would like to acknowledge supports provided by DOE (96ER45604) for this work.

PY - 2006

Y1 - 2006

N2 - Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy has been employed to study Zn-doped AlN epilayers grown by metal-organic chemical vapor deposition. The PL spectra of Zn-doped AlN epilayer exhibited two impurity emission lines at 5.40 and 4.50 eV, which were absent in undoped epilayers and assigned to the transitions of free electrons and electrons bound to nitrogen vacancies with three positive charges (0.90 eV deep) to the Zn0 acceptors. By comparing PL spectra of Zn- and Mg-doped AlN epilayers with undoped epilayers, it was deduced that Zn energy level is about 0.74 eV, which is about 0.23 eV deeper than the Mg energy level (0.51 eV) in AlN. It is thus concluded that contrary to theoretical prediction, Zn would not be a better candidate than Mg as an acceptor dopant in AlN.

AB - Deep ultraviolet time-resolved photoluminescence (PL) spectroscopy has been employed to study Zn-doped AlN epilayers grown by metal-organic chemical vapor deposition. The PL spectra of Zn-doped AlN epilayer exhibited two impurity emission lines at 5.40 and 4.50 eV, which were absent in undoped epilayers and assigned to the transitions of free electrons and electrons bound to nitrogen vacancies with three positive charges (0.90 eV deep) to the Zn0 acceptors. By comparing PL spectra of Zn- and Mg-doped AlN epilayers with undoped epilayers, it was deduced that Zn energy level is about 0.74 eV, which is about 0.23 eV deeper than the Mg energy level (0.51 eV) in AlN. It is thus concluded that contrary to theoretical prediction, Zn would not be a better candidate than Mg as an acceptor dopant in AlN.

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U2 - 10.1063/1.2387869

DO - 10.1063/1.2387869

M3 - Article

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192111

ER -

Growth and photoluminescence studies of Zn-doped AlN epilayers

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