Growth and photoluminescence studies of Al-rich AlN/Al xGa 1-xN quantum wells

T. M. Al Tahtamouni; N. Nepal; J. Y. Lin; H. X. Jiang; W. W. Chow

doi:10.1063/1.2358107

Growth and photoluminescence studies of Al-rich AlN/Al _xGa _1-xN quantum wells

T. M. Al Tahtamouni, N. Nepal, J. Y. Lin, H. X. Jiang, W. W. Chow

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

A set of AlN/Al _xGa _1-xN (x ∼ 0.65) quantum wells (QWs) with well width L _w, varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L _w dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L _w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L _w yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed.

Original language	English
Article number	131922
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2358107
State	Published - 2006

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title = "Growth and photoluminescence studies of Al-rich AlN/Al xGa 1-xN quantum wells",

abstract = "A set of AlN/Al xGa 1-xN (x ∼ 0.65) quantum wells (QWs) with well width L w, varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L w dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L w yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed.",

author = "{Al Tahtamouni}, {T. M.} and N. Nepal and Lin, {J. Y.} and Jiang, {H. X.} and Chow, {W. W.}",

note = "Funding Information: This research is supported by NSF and ARO.",

year = "2006",

doi = "10.1063/1.2358107",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "13",

}

TY - JOUR

T1 - Growth and photoluminescence studies of Al-rich AlN/Al xGa 1-xN quantum wells

AU - Al Tahtamouni, T. M.

AU - Nepal, N.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Chow, W. W.

N1 - Funding Information: This research is supported by NSF and ARO.

PY - 2006

Y1 - 2006

N2 - A set of AlN/Al xGa 1-xN (x ∼ 0.65) quantum wells (QWs) with well width L w, varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L w dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L w yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed.

AB - A set of AlN/Al xGa 1-xN (x ∼ 0.65) quantum wells (QWs) with well width L w, varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L w dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L w yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed.

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U2 - 10.1063/1.2358107

DO - 10.1063/1.2358107

M3 - Article

AN - SCOPUS:33749264579

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 131922

ER -

Growth and photoluminescence studies of Al-rich AlN/Al _xGa _1-xN quantum wells

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