Growth and photoluminescence studies of a -plane AlN Alx Ga1-x N quantum wells

T. M. Al Tahtamouni; A. Sedhain; J. Y. Lin; H. X. Jiang

doi:10.1063/1.2743956

Growth and photoluminescence studies of a -plane AlN Alx Ga1-x N quantum wells

T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Both a -plane and c -plane AlN Al0.65 Ga0.35 N quantum wells (QWs) have been grown by metal organic chemical vapor deposition and their photoluminescence (PL) emission properties were studied and compared. It was found that the low temperature PL characteristics of a -plane QWs are primarily governed by the quantum size effect, whereas those of c -plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width Lw for a -plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c -plane QWs. Moreover, Lw dependence studies also revealed that structures with Lw >2 nm and Lw ≈2 nm provide highest emission efficiency in a -plane and c -plane AlN Al0.65 Ga0.35 N QWs, respectively.

Original language	English
Article number	221105
Journal	Applied Physics Letters
Volume	90
Issue number	22
DOIs	https://doi.org/10.1063/1.2743956
State	Published - 2007

Access to Document

10.1063/1.2743956

Cite this

@article{2195b5a1060c4558ab0aa7d00bc6d4db,

title = "Growth and photoluminescence studies of a -plane AlN Alx Ga1-x N quantum wells",

abstract = "Both a -plane and c -plane AlN Al0.65 Ga0.35 N quantum wells (QWs) have been grown by metal organic chemical vapor deposition and their photoluminescence (PL) emission properties were studied and compared. It was found that the low temperature PL characteristics of a -plane QWs are primarily governed by the quantum size effect, whereas those of c -plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width Lw for a -plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c -plane QWs. Moreover, Lw dependence studies also revealed that structures with Lw >2 nm and Lw ≈2 nm provide highest emission efficiency in a -plane and c -plane AlN Al0.65 Ga0.35 N QWs, respectively.",

author = "{Al Tahtamouni}, {T. M.} and A. Sedhain and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: This research is supported by NSF and ARO.",

year = "2007",

doi = "10.1063/1.2743956",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "22",

}

TY - JOUR

T1 - Growth and photoluminescence studies of a -plane AlN Alx Ga1-x N quantum wells

AU - Al Tahtamouni, T. M.

AU - Sedhain, A.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: This research is supported by NSF and ARO.

PY - 2007

Y1 - 2007

N2 - Both a -plane and c -plane AlN Al0.65 Ga0.35 N quantum wells (QWs) have been grown by metal organic chemical vapor deposition and their photoluminescence (PL) emission properties were studied and compared. It was found that the low temperature PL characteristics of a -plane QWs are primarily governed by the quantum size effect, whereas those of c -plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width Lw for a -plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c -plane QWs. Moreover, Lw dependence studies also revealed that structures with Lw >2 nm and Lw ≈2 nm provide highest emission efficiency in a -plane and c -plane AlN Al0.65 Ga0.35 N QWs, respectively.

AB - Both a -plane and c -plane AlN Al0.65 Ga0.35 N quantum wells (QWs) have been grown by metal organic chemical vapor deposition and their photoluminescence (PL) emission properties were studied and compared. It was found that the low temperature PL characteristics of a -plane QWs are primarily governed by the quantum size effect, whereas those of c -plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width Lw for a -plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c -plane QWs. Moreover, Lw dependence studies also revealed that structures with Lw >2 nm and Lw ≈2 nm provide highest emission efficiency in a -plane and c -plane AlN Al0.65 Ga0.35 N QWs, respectively.

UR - http://www.scopus.com/inward/record.url?scp=34249884205&partnerID=8YFLogxK

U2 - 10.1063/1.2743956

DO - 10.1063/1.2743956

M3 - Article

AN - SCOPUS:34249884205

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221105

ER -

Growth and photoluminescence studies of a -plane AlN Alx Ga1-x N quantum wells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this