Growth and photoluminescence studies of a -plane AlN Alx Ga1-x N quantum wells

T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, H. X. Jiang

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21 Scopus citations

Abstract

Both a -plane and c -plane AlN Al0.65 Ga0.35 N quantum wells (QWs) have been grown by metal organic chemical vapor deposition and their photoluminescence (PL) emission properties were studied and compared. It was found that the low temperature PL characteristics of a -plane QWs are primarily governed by the quantum size effect, whereas those of c -plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width Lw for a -plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c -plane QWs. Moreover, Lw dependence studies also revealed that structures with Lw >2 nm and Lw ≈2 nm provide highest emission efficiency in a -plane and c -plane AlN Al0.65 Ga0.35 N QWs, respectively.

Original languageEnglish
Article number221105
JournalApplied Physics Letters
Volume90
Issue number22
DOIs
StatePublished - 2007

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