Growth and optical properties of InxAlyGa1-x-yN quaternary alloys

J. Li, K. B. Nam, K. H. Kim, J. Y. Lin, H. X. Jiang

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Abstract

InxAlyGa1-xN quaternary alloys with different In and Al compositions were grown by metalorganic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. It was observed that the dominant optical transition at low temperatures in InxAlyGa1-xN quaternary alloys was due to localized exciton recombination, while the localization effects in InxAlyGa1-xN quaternary alloys were combined from those of InGaN and AlGaN ternary alloys with comparable In and Al compositions. Our studies have revealed that InxAlyGa1-xN quaternary alloys with lattice matched with GaN epilayers (y≈4.8x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensity (or quantum efficiency) in InxAlyGa1-x-yN quaternary alloys than that of GaN. The quantum efficiency of InxAlyGa1-xN quaternary alloys was also enhanced significantly over AlGaN alloys with a comparable Al content. These results strongly suggested that InxAlyGa1-x-yN quaternary alloys open an avenue for the fabrication of many optoelectronic devices such as high efficient light emitters and detectors, particularly in the ultraviolet region.

Original languageEnglish
Pages (from-to)61-63
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number1
DOIs
StatePublished - Jan 1 2001

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