Growth and optical properties of a-plane AlN and Al rich AlN/Al xGa1-xN quantum wells grown on r-plane sapphire substrates

T. Al Tahtamouni, A. Sedhain, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalConference article

Abstract

A-plane AlN epilayers and AlN/Al0.65Ga0.35N quantum wells (QWs) have been grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The growth surface and high crystalline quality were confirmed by x-ray diffraction. Photoluminescence (PL) spectroscopy has been employed to probe the optical quality of the grown templates and QWs. The PL emission intensity of a-plane AlN has been compared with that of c-plane AlN. It was shown that the surface emission intensity of a-plane AlN epilayers is comparable to that of c-plane AlN. The PL emission properties of aand c-plane AlN/Al0.65Ga0.35N QWs were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width, Lw, for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs.

Original languageEnglish
Pages (from-to)1568-1570
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: Sep 16 2007Sep 21 2007

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