A-plane AlN epilayers and AlN/Al0.65Ga0.35N quantum wells (QWs) have been grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The growth surface and high crystalline quality were confirmed by x-ray diffraction. Photoluminescence (PL) spectroscopy has been employed to probe the optical quality of the grown templates and QWs. The PL emission intensity of a-plane AlN has been compared with that of c-plane AlN. It was shown that the surface emission intensity of a-plane AlN epilayers is comparable to that of c-plane AlN. The PL emission properties of aand c-plane AlN/Al0.65Ga0.35N QWs were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width, Lw, for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - 2008|
|Event||7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States|
Duration: Sep 16 2007 → Sep 21 2007