TY - JOUR
T1 - Growth and optical properties of a-plane AlN and Al rich AlN/Al xGa1-xN quantum wells grown on r-plane sapphire substrates
AU - Al Tahtamouni, T.
AU - Sedhain, A.
AU - Lin, J. Y.
AU - Jiang, H. X.
PY - 2008
Y1 - 2008
N2 - A-plane AlN epilayers and AlN/Al0.65Ga0.35N quantum wells (QWs) have been grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The growth surface and high crystalline quality were confirmed by x-ray diffraction. Photoluminescence (PL) spectroscopy has been employed to probe the optical quality of the grown templates and QWs. The PL emission intensity of a-plane AlN has been compared with that of c-plane AlN. It was shown that the surface emission intensity of a-plane AlN epilayers is comparable to that of c-plane AlN. The PL emission properties of aand c-plane AlN/Al0.65Ga0.35N QWs were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width, Lw, for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs.
AB - A-plane AlN epilayers and AlN/Al0.65Ga0.35N quantum wells (QWs) have been grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The growth surface and high crystalline quality were confirmed by x-ray diffraction. Photoluminescence (PL) spectroscopy has been employed to probe the optical quality of the grown templates and QWs. The PL emission intensity of a-plane AlN has been compared with that of c-plane AlN. It was shown that the surface emission intensity of a-plane AlN epilayers is comparable to that of c-plane AlN. The PL emission properties of aand c-plane AlN/Al0.65Ga0.35N QWs were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width, Lw, for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs.
UR - http://www.scopus.com/inward/record.url?scp=77951250591&partnerID=8YFLogxK
U2 - 10.1002/pssc.200778491
DO - 10.1002/pssc.200778491
M3 - Conference article
AN - SCOPUS:77951250591
SN - 1862-6351
VL - 5
SP - 1568
EP - 1570
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 6
T2 - 7th International Conference of Nitride Semiconductors, ICNS-7
Y2 - 16 September 2007 through 21 September 2007
ER -