Growth and optical properties of a-plane AlN and Al rich AlN/Al xGa1-xN quantum wells grown on r-plane sapphire substrates

T. Al Tahtamouni; A. Sedhain; J. Y. Lin; H. X. Jiang

doi:10.1002/pssc.200778491

Growth and optical properties of a-plane AlN and Al rich AlN/Al _xGa_1-xN quantum wells grown on r-plane sapphire substrates

T. Al Tahtamouni, A. Sedhain, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A-plane AlN epilayers and AlN/Al_0.65Ga_0.35N quantum wells (QWs) have been grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The growth surface and high crystalline quality were confirmed by x-ray diffraction. Photoluminescence (PL) spectroscopy has been employed to probe the optical quality of the grown templates and QWs. The PL emission intensity of a-plane AlN has been compared with that of c-plane AlN. It was shown that the surface emission intensity of a-plane AlN epilayers is comparable to that of c-plane AlN. The PL emission properties of aand c-plane AlN/Al_0.65Ga_0.35N QWs were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width, Lw, for a-plane QWs, whereas a strong dependence of the PL decay time on L_w was observed for c-plane QWs.

Original language	English
Pages (from-to)	1568-1570
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778491
State	Published - 2008
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: Sep 16 2007 → Sep 21 2007

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title = "Growth and optical properties of a-plane AlN and Al rich AlN/Al xGa1-xN quantum wells grown on r-plane sapphire substrates",

abstract = "A-plane AlN epilayers and AlN/Al0.65Ga0.35N quantum wells (QWs) have been grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The growth surface and high crystalline quality were confirmed by x-ray diffraction. Photoluminescence (PL) spectroscopy has been employed to probe the optical quality of the grown templates and QWs. The PL emission intensity of a-plane AlN has been compared with that of c-plane AlN. It was shown that the surface emission intensity of a-plane AlN epilayers is comparable to that of c-plane AlN. The PL emission properties of aand c-plane AlN/Al0.65Ga0.35N QWs were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width, Lw, for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs.",

author = "{Al Tahtamouni}, T. and A. Sedhain and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2008",

doi = "10.1002/pssc.200778491",

language = "English",

volume = "5",

pages = "1568--1570",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

number = "6",

note = "null ; Conference date: 16-09-2007 Through 21-09-2007",

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TY - JOUR

T1 - Growth and optical properties of a-plane AlN and Al rich AlN/Al xGa1-xN quantum wells grown on r-plane sapphire substrates

AU - Al Tahtamouni, T.

AU - Sedhain, A.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2008

Y1 - 2008

N2 - A-plane AlN epilayers and AlN/Al0.65Ga0.35N quantum wells (QWs) have been grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The growth surface and high crystalline quality were confirmed by x-ray diffraction. Photoluminescence (PL) spectroscopy has been employed to probe the optical quality of the grown templates and QWs. The PL emission intensity of a-plane AlN has been compared with that of c-plane AlN. It was shown that the surface emission intensity of a-plane AlN epilayers is comparable to that of c-plane AlN. The PL emission properties of aand c-plane AlN/Al0.65Ga0.35N QWs were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width, Lw, for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs.

AB - A-plane AlN epilayers and AlN/Al0.65Ga0.35N quantum wells (QWs) have been grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The growth surface and high crystalline quality were confirmed by x-ray diffraction. Photoluminescence (PL) spectroscopy has been employed to probe the optical quality of the grown templates and QWs. The PL emission intensity of a-plane AlN has been compared with that of c-plane AlN. It was shown that the surface emission intensity of a-plane AlN epilayers is comparable to that of c-plane AlN. The PL emission properties of aand c-plane AlN/Al0.65Ga0.35N QWs were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width, Lw, for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs.

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U2 - 10.1002/pssc.200778491

DO - 10.1002/pssc.200778491

M3 - Conference article

AN - SCOPUS:77951250591

VL - 5

SP - 1568

EP - 1570

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 6

Y2 - 16 September 2007 through 21 September 2007

ER -

Growth and optical properties of a-plane AlN and Al rich AlN/Al _xGa_1-xN quantum wells grown on r-plane sapphire substrates

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