Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

T. C. Doan; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.4959595

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

T. C. Doan, J. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick ¹⁰B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

Original language	English
Article number	075213
Journal	AIP Advances
Volume	6
Issue number	7
DOIs	https://doi.org/10.1063/1.4959595
State	Published - Jul 1 2016

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AB - Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick 10B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

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