Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

T. C. Doan; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.4959595

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

T. C. Doan, J. Li, J. Y. Lin, H. X. Jiang

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20 Scopus citations

Abstract

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick ¹⁰B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

Original language	English
Article number	075213
Journal	AIP Advances
Volume	6
Issue number	7
DOIs	https://doi.org/10.1063/1.4959595
State	Published - Jul 1 2016

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title = "Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors",

abstract = "Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick 10B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.",

author = "Doan, {T. C.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The efforts on h-BN material growth and neutron detector fabrication are supported by DHS ARI program (No. 2011-DN-077-ARI048) and the studies of the basic structural properties of h-BN epilayers are supported by NSF (ECCS-1402886). Jiang and Lin are grateful to the AT and T Foundation for the support of Ed Whitacre and Linda Whitacre endowed chairs. Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

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doi = "10.1063/1.4959595",

language = "English",

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journal = "AIP Advances",

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T1 - Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

AU - Doan, T. C.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The efforts on h-BN material growth and neutron detector fabrication are supported by DHS ARI program (No. 2011-DN-077-ARI048) and the studies of the basic structural properties of h-BN epilayers are supported by NSF (ECCS-1402886). Jiang and Lin are grateful to the AT and T Foundation for the support of Ed Whitacre and Linda Whitacre endowed chairs. Publisher Copyright: © 2016 Author(s).

PY - 2016/7/1

Y1 - 2016/7/1

N2 - Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick 10B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

AB - Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick 10B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

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Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

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