Growth and characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE

C. H. Wei; Z. Y. Xie; J. H. Edgar; K. C. Zeng; J. Y. Lin; H. X. Jiang; C. Ignatiev; J. Chaudhuri; D. N. Braski

Growth and characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE

C. H. Wei, Z. Y. Xie, J. H. Edgar, K. C. Zeng, J. Y. Lin, H. X. Jiang, C. Ignatiev, J. Chaudhuri, D. N. Braski

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. B_xGa_1-xN films were deposited on 6H-SiC (0001) substrates at 950°C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and B_xGa_1-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no B_xGa_1-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of B_xGa_1-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Original language	English
Pages (from-to)	G3.79
Journal	Materials Research Society Symposium - Proceedings
Volume	537
State	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 30 1998 → Dec 4 1998

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@article{9c962cbeba254e30b3b5182d232fb3c6,

title = "Growth and characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE",

abstract = "Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1-xN films were deposited on 6H-SiC (0001) substrates at 950°C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.",

author = "Wei, {C. H.} and Xie, {Z. Y.} and Edgar, {J. H.} and Zeng, {K. C.} and Lin, {J. Y.} and Jiang, {H. X.} and C. Ignatiev and J. Chaudhuri and Braski, {D. N.}",

year = "1999",

language = "English",

volume = "537",

pages = "G3.79",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' ; Conference date: 30-11-1998 Through 04-12-1998",

}

TY - JOUR

T1 - Growth and characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE

AU - Wei, C. H.

AU - Xie, Z. Y.

AU - Edgar, J. H.

AU - Zeng, K. C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Ignatiev, C.

AU - Chaudhuri, J.

AU - Braski, D. N.

PY - 1999

Y1 - 1999

N2 - Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1-xN films were deposited on 6H-SiC (0001) substrates at 950°C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

AB - Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1-xN films were deposited on 6H-SiC (0001) substrates at 950°C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

UR - http://www.scopus.com/inward/record.url?scp=0033322864&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033322864

SN - 0272-9172

VL - 537

SP - G3.79

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys'

Y2 - 30 November 1998 through 4 December 1998

ER -

Growth and characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE

Abstract

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